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| PartNumber | APT60GA60JD60 | APT60GF120JDR | APT60GF120JRD |
| Description | IGBT Modules FG, IGBT-COMBI, 600V, SOT-227 | ||
| Manufacturer | Microchip | - | APT |
| Product Category | IGBT Modules | - | Module |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Continuous Collector Current at 25 C | 112 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Pd Power Dissipation | 356 W | - | - |
| Package / Case | SOT-227-4 | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | - | - |
| Height | 9.6 mm | - | - |
| Length | 38.2 mm | - | - |
| Operating Temperature Range | - 55 C to + 150 C | - | - |
| Width | 25.4 mm | - | - |
| Brand | Microchip / Microsemi | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | IGBTs | - | - |
| Tradename | POWER MOS 8, ISOTOP | - | - |
| Unit Weight | 1.058219 oz | - | - |