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| PartNumber | APT35GN120BG | APT35GN120L2DQ2G | APT35GN120L2DQ2 |
| Description | IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS | |
| Manufacturer | Microchip | Microchip | Microsemi Corporation |
| Product Category | IGBT Transistors | IGBT Transistors | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | TO-264MAX-3 | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | - |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 1.7 V |
| Maximum Gate Emitter Voltage | 30 V | 30 V | 30 V |
| Continuous Collector Current at 25 C | 94 A | 94 A | 94 A |
| Pd Power Dissipation | 379 W | 379 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 94 A | 94 A | 94 A |
| Height | 5.31 mm | 5.21 mm | - |
| Length | 21.46 mm | 26.49 mm | - |
| Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - |
| Width | 16.26 mm | 20.5 mm | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Continuous Collector Current | 94 A | 94 A | - |
| Gate Emitter Leakage Current | 600 nA | 600 nA | 600 nA |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 1.340411 oz | 0.373904 oz | 0.373904 oz |
| Series | - | - | - |
| Package Case | - | - | TO-264-3, TO-264AA |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | * |
| Power Max | - | - | 379W |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | - | 94A |
| Voltage Collector Emitter Breakdown Max | - | - | 1200V |
| IGBT Type | - | - | NPT, Trench Field Stop |
| Current Collector Pulsed Icm | - | - | 105A |
| Vce on Max Vge Ic | - | - | 2.1V @ 15V, 35A |
| Switching Energy | - | - | 2.315mJ (off) |
| Gate Charge | - | - | 220nC |
| Td on off 25°C | - | - | 24ns/300ns |
| Test Condition | - | - | 800V, 35A, 2.2 Ohm, 15V |
| Pd Power Dissipation | - | - | 379 W |
| Collector Emitter Voltage VCEO Max | - | - | 1.2 kV |