A2V09H400-04NR3 vs A2V09H300-04NR3 vs A2V09H300-04N

 
PartNumberA2V09H400-04NR3A2V09H300-04NR3A2V09H300-04N
DescriptionRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 107 W Avg., 48 VRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 79 W Avg., 48 V
ManufacturerNXPNXP-
Product CategoryRF MOSFET TransistorsRF MOSFET Transistors-
RoHSY--
Transistor PolarityDual N-ChannelN-Channel-
TechnologySiSi-
Id Continuous Drain Current2.1 A900 mA, 1.3 A-
Vds Drain Source Breakdown Voltage- 500 mV, 105 V- 500 mV, 105 V-
Gain17.9 dB19.7 dB-
Output Power107 W79 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseOM-780-4OM-780-4L-4-
PackagingReelReel-
Operating Frequency720 MHz to 960 MHz720 MHz to 960 MHz-
TypeRF Power MOSFETRF Power MOSFET-
BrandNXP / FreescaleNXP / Freescale-
Number of Channels2 Channel2 Channel-
Moisture SensitiveYes--
Product TypeRF MOSFET TransistorsRF MOSFET Transistors-
Factory Pack Quantity250250-
SubcategoryMOSFETsMOSFETs-
Vgs Gate Source Voltage- 6 V, 10 V- 6 V, 10 V-
Vgs th Gate Source Threshold Voltage1.3 V1.8 V-
Part # Aliases935337372528935320809528-
Unit Weight0.108416 oz0.109254 oz-
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