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| PartNumber | A2T21H410-24SR6 | A2T21H450W19SR6 | A2T21H410-24S |
| Description | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 28 W Avg, 28 V | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 89 W Avg., 30 V | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | Si | - |
| Id Continuous Drain Current | 1.6 A, 2.7 A | - | - |
| Vds Drain Source Breakdown Voltage | - 500 mV, 65 V | - | - |
| Gain | 15.6 dB | - | - |
| Output Power | 72 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | NI-1230S-4L2L-6 | - | - |
| Packaging | Reel | Reel | - |
| Operating Frequency | 2.11 GHz to 2.17 GHz | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | NXP / Freescale | NXP / Freescale | - |
| Number of Channels | 2 Channel | - | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 150 | 150 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 6 V, 10 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Part # Aliases | 935312756128 | 935323762128 | - |
| Unit Weight | 0.303504 oz | 0.178310 oz | - |