A1C15S12M3 vs A1C1526-0CS-CS568J6 vs A1C153M

 
PartNumberA1C15S12M3A1C1526-0CS-CS568J6A1C153M
DescriptionIGBT Modules PTD HIGH VOLTAGE
ManufacturerSTMicroelectronics--
Product CategoryIGBT Modules--
RoHSY--
TechnologySi--
ProductIGBT Silicon Modules--
ConfigurationConverter Inverter Brake--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.95 V--
Continuous Collector Current at 25 C15 A--
Gate Emitter Leakage Current500 nA--
Pd Power Dissipation142.8 W--
Package / CaseACEPACK1--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
SeriesA1C15S12M3--
BrandSTMicroelectronics--
Mounting StyleThrough Hole--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity18--
SubcategoryIGBTs--
TradenameACEPACK--
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