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| PartNumber | 2SD1816T-E | 2SD1816T-H | 2SD1816T |
| Description | Bipolar Transistors - BJT BIP NPN 4A 100V | Bipolar Transistors - BJT BIP NPN 4A 100V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | SANYO |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-251-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Series | 2SD1816 | 2SD1816 | - |
| Packaging | Bulk | Bulk | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 4 A | 4 A | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Package Case | - | TO-251 | - |
| Pd Power Dissipation | - | 1 W | - |
| Collector Emitter Voltage VCEO Max | - | 100 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| DC Collector Base Gain hfe Min | - | 70 | - |