2SC4134S-TL-E vs 2SC4134S-E vs 2SC4134

 
PartNumber2SC4134S-TL-E2SC4134S-E2SC4134
DescriptionBipolar Transistors - BJT BIP NPN 1A 100VBipolar Transistors - BJT BIP NPN 1A 100V
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RFTransistors - Bipolar (BJT) - RF
RoHSY--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3--
Transistor PolarityNPNNPNNPN
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO120 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage100 mV--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT120 MHz--
Maximum Operating Temperature+ 150 C--
Series2SC41342SC41342SC4134
PackagingReelBulkBulk
BrandON Semiconductor--
Continuous Collector Current1 A1 A1 A
Pd Power Dissipation800 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity700--
SubcategoryTransistors--
Unit Weight0.063493 oz0.139332 oz0.139332 oz
Package Case-TO-251TO-251
Pd Power Dissipation-0.8 W0.8 W
Collector Emitter Voltage VCEO Max-100 V100 V
Emitter Base Voltage VEBO-6 V6 V
DC Collector Base Gain hfe Min-100100
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