 |  | | |
| PartNumber | 2SA1182-Y,LF | 2SA1182-Y | 2SA1182-Y(TE85LF) |
| Description | Bipolar Transistors - BJT Bias Resistor Built-in transistor | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-236MOD-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Collector Emitter Voltage VCEO Max | - 30 V | - | - |
| Collector Base Voltage VCBO | - 35 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.25 V | - | - |
| Maximum DC Collector Current | - 500 mA | - | - |
| Gain Bandwidth Product fT | 200 MHz | - | - |
| Series | 2SA1182 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | - 500 mA | - | - |
| DC Collector/Base Gain hfe Min | 25 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000423 oz | - | - |