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| PartNumber | 2SA1163-BL(TE85L,F | 2SA1163-BL,LF | 2SA1163-BL |
| Description | Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-346-3 | TO-236-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 120 V | - 120 V | - |
| Collector Base Voltage VCBO | - 120 V | - 120 V | - |
| Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
| Collector Emitter Saturation Voltage | - 0.3 V | - 300 mV | - |
| Maximum DC Collector Current | - 100 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
| Series | 2SA1163 | 2SA1163 | - |
| DC Current Gain hFE Max | 700 | 700 | - |
| Packaging | Reel | Reel | - |
| Brand | Toshiba | Toshiba | - |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | 200 | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Maximum Operating Temperature | - | + 125 C | - |
| Unit Weight | - | 0.000423 oz | - |