2N697 vs 2N697-305 vs 2N6975

 
PartNumber2N6972N697-3052N6975
DescriptionBipolar Transistors - BJT Power BJT
ManufacturerMicrochip--
Product CategoryBipolar Transistors - BJT--
RoHSN--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-5-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.5 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
DC Current Gain hFE Max120 at 150 mA, 10 VDC--
PackagingBulk--
BrandMicrochip / Microsemi--
DC Collector/Base Gain hfe Min40 at 150 mA, 10 VDC--
Pd Power Dissipation600 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Top