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| PartNumber | 2N6260 PBFREE | 2N6261 PBFREE | 2N6261 |
| Description | Bipolar Transistors - BJT NPN 4.0A 50Vcbo 40Vceo 1.5Vce | Bipolar Transistors - BJT NPN 4.0A 90Vcbo 80Vceo 0.5Vce | 4 A, 80 V, NPN, SI, POWER TRANSISTOR, TO-66 |
| Manufacturer | Central Semiconductor | Central Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-66-2 | TO-66-2 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 40 V | 80 V | - |
| Collector Base Voltage VCBO | 50 V | 90 V | - |
| Collector Emitter Saturation Voltage | 1.5 V | 0.5 V | - |
| Gain Bandwidth Product fT | 0.8 MHz | 0.8 MHz | - |
| Series | 2N62 | 2N62 | - |
| DC Current Gain hFE Max | 100 at 1.5 A | 100 at 1.5 A | - |
| Packaging | Tube | Tube | - |
| Brand | Central Semiconductor | Central Semiconductor | - |
| Continuous Collector Current | 4 A | 4 A | - |
| DC Collector/Base Gain hfe Min | 20 at 1.5 A | 25 at 1.5 A | - |
| Pd Power Dissipation | 29 W | 50 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | Transistors | Transistors | - |