2N6111G vs 2N611 vs 2N6111

 
PartNumber2N6111G2N6112N6111
DescriptionBipolar Transistors - BJT 7A 30V 40W PNPTRANSISTOR, PNP, TO-220TRANS PNP 30V 7A TO220AB
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage3.5 V--
Maximum DC Collector Current7 A--
Gain Bandwidth Product fT10 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N6111--
Height15.75 mm--
Length10.53 mm--
PackagingTube--
Width4.83 mm--
BrandON Semiconductor--
Continuous Collector Current7 A--
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation40 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.211644 oz--
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