2N3906RLRA vs 2N3906RLRAG vs 2N3906RLRE

 
PartNumber2N3906RLRA2N3906RLRAG2N3906RLRE
DescriptionBipolar Transistors - BJT 200mA 40V PNPBipolar Transistors - BJT 200mA 40V PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max40 V40 V-
Collector Base Voltage VCBO40 V40 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.4 V0.4 V-
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT250 MHz250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height5.33 mm5.33 mm-
Length5.2 mm5.2 mm-
PackagingReelReel-
Width4.19 mm4.19 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current0.2 A0.2 A-
DC Collector/Base Gain hfe Min6060-
Pd Power Dissipation250 mW250 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20002000-
SubcategoryTransistorsTransistors-
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