2N2857 vs 2N2857-MOT vs 2N2857-DIE

 
PartNumber2N28572N2857-MOT2N2857-DIE
DescriptionBipolar Transistors - BJT NPN VHF/UHF AM
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-72-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max15 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO2.5 V--
Collector Emitter Saturation Voltage---
Maximum DC Collector Current40 mA--
Gain Bandwidth Product fT1.9 GHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
Series2N2857--
DC Current Gain hFE Max150--
Height5.33 mm--
Length5.84 mm--
PackagingBulk--
Width5.84 mm--
BrandCentral Semiconductor--
Continuous Collector Current40 mA--
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Part # Aliases2N2857 PBFREE--
Unit Weight0.011365 oz--
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