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| PartNumber | 2N2219 PBFREE | 2N2219 | 2N2219,2N2905A |
| Description | Bipolar Transistors - BJT 60Vcbo 30Vceo 5.0Vebo 800mA 800mW | Bipolar Transistors - BJT NPN Ampl/Switch | |
| Manufacturer | Central Semiconductor | Central Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | N | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-39-3 | TO-39-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 30 V | 30 V | - |
| Collector Base Voltage VCBO | 60 V | 60 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | - |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2N22 | 2N2219 | - |
| DC Current Gain hFE Max | 300 at 150 mA, 10 V | - | - |
| Packaging | Bulk | Bulk | - |
| Brand | Central Semiconductor | Central Semiconductor | - |
| Continuous Collector Current | 800 mA | - | - |
| DC Collector/Base Gain hfe Min | 100 at 150 mA, 10 V | 35 | - |
| Pd Power Dissipation | 800 mW | 800 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | Transistors | Transistors | - |
| Maximum DC Collector Current | - | 0.8 A | - |
| Height | - | 6.6 mm | - |
| Length | - | 9.4 mm | - |
| Width | - | 9.4 mm | - |
| Part # Aliases | - | 2N2219 TIN/LEAD | - |
| Unit Weight | - | 0.038801 oz | - |