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SIR662DP-T1-GE3

SIR662DP-T1-GE3
Mfr. #:
SIR662DP-T1-GE3
Produttore:
Vishay
Descrizione:
IGBT Transistors MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIR662DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
SIR662DP-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
VISHAY
categoria di prodotto
FET - Single
Serie
SIRxxxDP
Confezione
Bobina
Alias ​​parziali
SIR662DP-GE3
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Nome depositato
ThunderFET TrenchFET
Pacchetto-Custodia
SO-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
104 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
60 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1 V to 2.5 V
Rds-On-Drain-Source-Resistenza
2.7 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
64 nC
Transconduttanza diretta-Min
93 S
Tags
SIR662DP-T1, SIR662DP-T, SIR662, SIR66, SIR6, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO T/R / MOSFET N-CH 60V 60A PPAK SO-8
***ied Electronics & Automation
60V 2.7mOhm@10V 60A N-Ch MV T-FET
***nell
MOSFET, N CH, DIO, 60V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SiR662DP TrenchFET® Power MOSFET
Vishay Siliconix SiR662DP 60V N-Channel TrenchFET® Power MOSFET provides industry-leading on-resistance values up to 27% lower than the next closest competing device. Vishay Siliconix SiR662DP TrenchFET® Power MOSFET also offer the industry's best on-resistance times gate charge figure of merit (FOM) that is up to 57% better than the closest competing device. SiR662DP TrenchFET® Power MOSFET provide lower conduction losses while also lowering switching losses, especially at higher frequency. It is designed for use in secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications. Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descrizione Azione Prezzo
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 60V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.9623
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 60V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.0646
  • 500:$1.2848
  • 100:$1.6519
  • 10:$2.0560
  • 1:$2.2800
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 60V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.0646
  • 500:$1.2848
  • 100:$1.6519
  • 10:$2.0560
  • 1:$2.2800
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR662DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9429
  • 6000:$0.9149
  • 12000:$0.8779
  • 18000:$0.8529
  • 30000:$0.8299
SIR662DP-T1-GE3
DISTI # 83T3534		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
  • 1:$2.0200
  • 25:$1.6800
  • 50:$1.4900
  • 100:$1.3000
  • 250:$1.2200
  • 500:$1.1400
  • 1000:$0.9400
SIR662DP-T1-GE3
DISTI # 65T1666		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.9590
  • 3000:$0.9530
  • 6000:$0.9080
  • 12000:$0.8040
SIR662DP-T1-GE3
DISTI # 64T4039		Vishay IntertechnologiesMOSFET Transistor, N Channel, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V , RoHS Compliant: Yes0
  • 1:$2.0200
  • 25:$1.6800
  • 50:$1.4900
  • 100:$1.3000
  • 250:$1.2200
  • 500:$1.1400
  • 1000:$0.9400
SIR662DP-T1-GE3
DISTI # 70459586		Vishay Siliconix60V 2.7mOhm@10V 60A N-Ch MV T-FET
RoHS: Compliant		0
  • 3000:$1.2520
SIR662DP-T1-GE3
DISTI # 781-SIR662DP-T1-GE3		Vishay IntertechnologiesMOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
RoHS: Compliant		0
  • 1:$2.0200
  • 10:$1.6800
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9400
  • 3000:$0.8750
  • 6000:$0.8430
  • 9000:$0.8100
SIR662DP-T1-GE3Vishay IntertechnologiesMOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FETAmericas -
    SIR662DP-T1-GE3
    DISTI # 2056694    		Vishay IntertechnologiesMOSFET, N CH, DIO, 60V,100A, PPK SO8
    RoHS: Compliant    		0
    • 1:$3.2000
    • 10:$2.6600
    • 100:$2.0600
    • 500:$1.8100
    • 1000:$1.5000
    • 3000:$1.3900
    • 6000:$1.3400
    • 9000:$1.2900
    SIR662DP-T1-GE3
    DISTI # 2127797    		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-
    RoHS: Compliant    		0
    • 1:$3.2000
    • 10:$2.6600
    • 100:$2.0600
    • 500:$1.8100
    • 1000:$1.5000
    • 3000:$1.3900
    • 6000:$1.3400
    • 9000:$1.2900
    SIR662DP-T1-GE3
    DISTI # 2056694    		Vishay IntertechnologiesMOSFET, N CH, DIO, 60V,100A, PPK SO8
    RoHS: Compliant    		0
    • 1:£1.7100
    • 10:£1.2800
    • 100:£0.9730
    • 250:£0.9120
    • 500:£0.8500
    Immagine Parte # Descrizione
    SIR662DP-T1-GE3

    Mfr.#: SIR662DP-T1-GE3

    OMO.#: OMO-SIR662DP-T1-GE3

    		 MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
    SIR662DP-T1-GE3

    Mfr.#: SIR662DP-T1-GE3

    OMO.#: OMO-SIR662DP-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
    SIR662DP

    Mfr.#: SIR662DP

    OMO.#: OMO-SIR662DP-1190

    		 Nuovo e originale
    SIR662DP-T1-E3

    Mfr.#: SIR662DP-T1-E3

    OMO.#: OMO-SIR662DP-T1-E3-1190

    		 Nuovo e originale
    SIR662DP-T1-GE

    Mfr.#: SIR662DP-T1-GE

    OMO.#: OMO-SIR662DP-T1-GE-1190

    		 Nuovo e originale
    SIR662DP-TI-GE3

    Mfr.#: SIR662DP-TI-GE3

    OMO.#: OMO-SIR662DP-TI-GE3-1190

    		 Nuovo e originale
    SIR662DPT1GE3

    Mfr.#: SIR662DPT1GE3

    OMO.#: OMO-SIR662DPT1GE3-1190

    		 Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    3500
    Inserisci la quantità:
    Il prezzo attuale di SIR662DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,22 USD
    1,22 USD
    10
    1,15 USD
    11,54 USD
    100
    1,09 USD
    109,35 USD
    500
    1,03 USD
    516,40 USD
    1000
    0,97 USD
    972,00 USD
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