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IXFR64N60Q3

IXFR64N60Q3
Mfr. #:
IXFR64N60Q3
Produttore:
Littelfuse
Descrizione:
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFR64N60Q3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR64N60Q3 DatasheetIXFR64N60Q3 Datasheet (P4-P5)
ECAD Model:
Maggiori informazioni:
IXFR64N60Q3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
42 A
Rds On - Resistenza Drain-Source:
104 mOhms
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
190 nC
Pd - Dissipazione di potenza:
568 W
Configurazione:
Separare
Nome depositato:
HiPerFET
Confezione:
Tubo
Serie:
IXFR64N60
Tipo di transistor:
1 N-Channel
Marca:
IXYS
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
300 ns
Quantità confezione di fabbrica:
30
sottocategoria:
MOSFET
Unità di peso:
0.056438 oz
Tags
IXFR64, IXFR6, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descrizione Azione Prezzo
IXFR64N60Q3
DISTI # IXFR64N60Q3-ND		IXYS CorporationMOSFET N-CH 600V 42A ISOPLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		29In Stock
  • 510:$19.5408
  • 120:$22.3728
  • 30:$24.0720
  • 10:$26.1960
  • 1:$28.3200
IXFR64N60Q3
DISTI # 747-IXFR64N60Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A
RoHS: Compliant		20
  • 1:$28.3200
  • 5:$26.9100
  • 10:$26.2000
  • 25:$24.0700
  • 50:$23.0500
  • 100:$22.3700
  • 250:$20.5300
Immagine Parte # Descrizione
IXFR64N60P

Mfr.#: IXFR64N60P

OMO.#: OMO-IXFR64N60P

 MOSFET DIODE Id36 BVdass600
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

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 MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A
IXFR64N50P

Mfr.#: IXFR64N50P

OMO.#: OMO-IXFR64N50P

 MOSFET 500V 64A
IXFR64N50Q3

Mfr.#: IXFR64N50Q3

OMO.#: OMO-IXFR64N50Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3-IXYS-CORPORATION

 MOSFET N-CH 600V 42A ISOPLUS247
IXFR66N50Q2

Mfr.#: IXFR66N50Q2

OMO.#: OMO-IXFR66N50Q2-IXYS-CORPORATION

 MOSFET N-CH 500V 50A ISOPLUS247
IXFR64N60P

Mfr.#: IXFR64N60P

OMO.#: OMO-IXFR64N60P-IXYS-CORPORATION

 Darlington Transistors MOSFET DIODE Id36 BVdass600
IXFR64N50Q3

Mfr.#: IXFR64N50Q3

OMO.#: OMO-IXFR64N50Q3-IXYS-CORPORATION

 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
IXFR64N50P

Mfr.#: IXFR64N50P

OMO.#: OMO-IXFR64N50P-IXYS-CORPORATION

 MOSFET 500V 64A
Disponibilità
Azione:
20
Su ordine:
2003
Inserisci la quantità:
Il prezzo attuale di IXFR64N60Q3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
28,32 USD
28,32 USD
5
26,91 USD
134,55 USD
10
26,20 USD
262,00 USD
25
24,07 USD
601,75 USD
50
23,05 USD
1 152,50 USD
100
22,37 USD
2 237,00 USD
250
20,53 USD
5 132,50 USD
500
19,54 USD
9 770,00 USD
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