We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BUZ111S | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 3249 |
|
| BUZ111SL-E3045A | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2000 |
|
| BUZ111SLE3045A | Siemens | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2000 |
|
| BUZ111S | Infineon Technologies AG | 8800 | ||
| BUZ111SL | Siemens | MOSFET Transistor, N-Channel, TO-220AB | 90 | |
| BUZ111 | Fairchild Semiconductor Corporation | RoHS: Compliant | 1249 | |
| BUZ111SE3045A | Siemens | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 215 | |
| BUZ111S | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 4 | |
| BUZ111SE3045 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2000 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BUZ100SLE3045A OMO.#: OMO-BUZ100SLE3045A-1190 |
Nuovo e originale |
|
|
Mfr.#: BUZ215 OMO.#: OMO-BUZ215-1190 |
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: BUZ351 OMO.#: OMO-BUZ351-1190 |
Nuovo e originale |
|
|
Mfr.#: BUZ357 OMO.#: OMO-BUZ357-1190 |
Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
|
|
Mfr.#: BUZ380 OMO.#: OMO-BUZ380-1190 |
Nuovo e originale |
|
|
Mfr.#: BUZ54 OMO.#: OMO-BUZ54-1190 |
Nuovo e originale |
|
|
Mfr.#: BUZ71F OMO.#: OMO-BUZ71F-1190 |
Nuovo e originale |
|
Mfr.#: BUZ73 |
MOSFET N-CH 200V 7A TO-220AB |
|
|
Mfr.#: BUZ80 OMO.#: OMO-BUZ80-1190 |
MOSFET Transistor, N-Channel, TO-220AB |
|
|
Mfr.#: BUZ32 H |
IGBT Transistors MOSFET N-Ch 200V 9.5A TO220-3 |