SIA2206E02-HO

Mfr. #:: SIA2206E02-HO
Produttore:: SAMSUNG
Descrizione:
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIA2206E02-HO Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: SAMSUNG

categoria di prodotto: Chip IC

Tags: SIA2206, SIA220, SIA22, SIA2, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIHB22N60ET1-GE3 DISTI # SIHB22N60ET1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 600V 21A TO263 RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	785In Stock	100:$3.1048 10:$3.7580 1:$4.1900
SIHB22N60ET1-GE3 DISTI # SIHB22N60ET1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 600V 21A TO263 RoHS: Not compliant Min Qty: 1 Container: Digi-Reel®	785In Stock	100:$3.1048 10:$3.7580 1:$4.1900
SIHB22N60E-E3 DISTI # SIHB22N60E-E3-ND	Vishay Siliconix	MOSFET N-CH 600V 21A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	418In Stock	1000:$2.2792 500:$2.7025 100:$3.3374 10:$4.0700 1:$4.5600
SIHB22N60E-GE3 DISTI # SIHB22N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 21A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$2.4272 500:$2.8505 100:$3.4854 10:$4.2180 1:$4.7100
SIHB22N60ET1-GE3 DISTI # SIHB22N60ET1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 600V 21A TO263 RoHS: Not compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	800:$2.2400
SIHB22N60EL-GE3 DISTI # SIHB22N60EL-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 21A TO263 RoHS: Not compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$2.3408
SIHB22N60ET5-GE3 DISTI # SIHB22N60ET5-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 21A TO263 RoHS: Not compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	800:$2.4420
SIHB22N60E-E3 DISTI # SIHB22N60E-E3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60E-E3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.0900 2000:$1.9900 4000:$1.9900 6000:$1.8900 10000:$1.7900
SIHB22N60E-GE3 DISTI # SIHB22N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB22N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$2.0900 2000:$1.9900 4000:$1.9900 6000:$1.8900 10000:$1.7900
SIHB22N60EL-GE3 DISTI # SIHB22N60EL-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60EL-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$2.2900 6000:$2.1900 12000:$2.0900 18000:$2.0900 30000:$1.9900
SIHB22N60ET1-GE3 DISTI # SIHB22N60ET1-GE3	Vishay Intertechnologies	N-CHANNEL 600V - Trays (Alt: SIHB22N60ET1-GE3) RoHS: Compliant Min Qty: 800 Container: Tray	Americas - 0	800:$2.0900 1600:$2.0900 3200:$1.9900 4800:$1.8900 8000:$1.8900
SIHB22N60E-GE3 DISTI # 83T7333	Vishay Intertechnologies	MOSFET, N CH, 600V, 21A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:227W,No. of Pins:3 RoHS Compliant: Yes	0	2500:$2.2600 1000:$2.3700 500:$2.7400 100:$3.1100 50:$3.3000 25:$3.5100 10:$3.7100 1:$4.4100
SIHB22N60E-GE3 DISTI # 99W9448	Vishay Intertechnologies	N-CHANNEL 600V	0	3000:$1.9600 2000:$2.0800 1000:$2.2200 1:$2.3400
SIHB22N60ET1-GE3. DISTI # 61AC1922	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:227W,No. of Pins:3Pins RoHS Compliant: Yes	0	4800:$1.8900 3200:$1.9900 1:$2.0900
SIHB22N60ET1-GE3 DISTI # 78-SIHB22N60ET1-GE3	Vishay Intertechnologies	MOSFET 600V Vds E Series D2PAK TO-263 RoHS: Compliant	637	1:$3.5900 10:$2.9700 100:$2.4500 250:$2.3700 500:$2.1300
SIHB22N60E-E3 DISTI # 781-SIHB22N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	2025	1:$4.5600 10:$4.0700 100:$3.3300 250:$2.8900 500:$2.7000 1000:$2.2700
SIHB22N60E-GE3 DISTI # 781-SIHB22N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	2569	1:$4.7100 10:$4.2100 100:$3.4800 250:$3.1900 500:$2.8500 1000:$2.4900
SIHB22N60EL-GE3 DISTI # 78-SIHB22N60EL-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	0	1:$4.4900 10:$3.7200 100:$3.0600 250:$2.9700 500:$2.6600 1000:$2.2400 3000:$2.1300
SIHB22N60ET5-GE3 DISTI # 78-SIHB22N60ET5-GE3	Vishay Intertechnologies	MOSFET 600V Vds E Series D2PAK TO-263 RoHS: Compliant	0	800:$2.0800 2400:$1.9700
SIHB22N60E-GE3 DISTI # 7689313P	Vishay Intertechnologies	MOSFET N-CHANNEL 600V 21A D2PAK, TU	918	200:£1.8100 100:£1.8500 50:£1.9200 10:£2.0900
SIHB22N60E	Vishay Siliconix	Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant	Europe - 800
SIHB22N60EGE3	Vishay Siliconix	Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	Europe - 250
SIHB22N60E-GE3 DISTI # TMOSP10774	Vishay Intertechnologies	MOSFET650V 180mOhm21A TO263 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$3.1200
SIHB22N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	Americas - 46200
SIHB22N60S-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	Americas - 900
SIHB22N60E-GE3 DISTI # 2079772	Vishay Intertechnologies	MOSFET, N CH, 600V, 21A, D2PAK RoHS: Compliant	0	500:£1.5500 250:£1.5800 100:£1.6000 10:£1.6300 1:£2.6000
SIHB22N60E-GE3 DISTI # 2079772	Vishay Intertechnologies	MOSFET, N CH, 600V, 21A, D2PAK RoHS: Compliant	0	2000:$3.1200 1000:$3.2900 500:$3.9000 250:$4.3400 100:$4.4800 10:$5.4400 1:$6.5700

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Disponibilità

Azione:: Available
Su ordine:: 4500
Inserisci la quantità:

Il prezzo attuale di SIA2206E02-HO è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,00 USD~~; ~~0,00 USD~~

10: ~~0,00 USD~~; ~~0,00 USD~~

100: ~~0,00 USD~~; ~~0,00 USD~~

500: ~~0,00 USD~~; ~~0,00 USD~~

1000: ~~0,00 USD~~; ~~0,00 USD~~

Iniziare con

SIA2206 7
SIA220 9
SIA22 22
SIA2 23
SIA 347

SIA2206E02-HO

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes