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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| RFD4N06LSM9A DISTI # RFD4N06LSM9A-ND | ON Semiconductor | MOSFET N-CH 60V 4A DPAK Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| RFD4N06LSM9A DISTI # 512-RFD4N06LSM9A | ON Semiconductor | MOSFET 60V Single RoHS: Compliant | 0 | |
| RFD4N06LSM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 67132 |
|
| RFD4N06L | Harris Semiconductor | 4A, 60V, 0.6ohm, N-Channel, POWER MOSFET RoHS: Not Compliant | 1424 |
|
| D4N06L | Harris Semiconductor | 144 | ||
| RFD4N06LSM | ISC | DPAK/TO-252 | 5000 | |
| RFD4N06L | ISC | IPAK/TO-251 | 5000 | |
| RFD4N06LSM9AS2457 | Fairchild Semiconductor Corporation | RoHS: Compliant | Americas - 38489 | |
| RFD4N06L | HARTING Technology Group | Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | Europe - 975 | |
| RFD4N06L | INSTOCK | 2112 | ||
| RFD4N06L | HARTING Technology Group | INSTOCK | 2280 |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: D4NK60Z OMO.#: OMO-D4NK60Z-1190 |
Nuovo e originale |
|
|
Mfr.#: D4NK60Z ST OMO.#: OMO-D4NK60Z-ST-1190 |
Nuovo e originale |
|
|
Mfr.#: D4NK60Z-1 OMO.#: OMO-D4NK60Z-1-1190 |
Nuovo e originale |
|
|
Mfr.#: D4NK60ZT4 OMO.#: OMO-D4NK60ZT4-1190 |
Nuovo e originale |
|
|
Mfr.#: D4NK6OZ OMO.#: OMO-D4NK6OZ-1190 |
Nuovo e originale |