IRF540ZLPBF

IRF540ZLPBF
Mfr. #:
IRF540ZLPBF
Produttore:
Infineon Technologies
Descrizione:
Darlington Transistors MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF540ZLPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IRF540ZLPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IR
categoria di prodotto
FET - Single
Confezione
Tubo
Unità di peso
0.084199 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
I2PAK-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
92 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
39 ns
Ora di alzarsi
51 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
36 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistenza
26.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
43 ns
Tempo di ritardo all'accensione tipico
15 ns
Qg-Gate-Carica
42 nC
Modalità canale
Aumento
Tags
IRF540Z, IRF540, IRF54, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
IRF540N/Z Advanced HEXFET® Power MOSFETs
Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRF540ZLPBF
DISTI # IRF540ZLPBF-ND
Infineon Technologies AGMOSFET N-CH 100V 36A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube
531In Stock
  • 1000:$0.5940
  • 500:$0.7524
  • 100:$0.9702
  • 10:$1.2280
  • 1:$1.3900
IRF540ZLPBF
DISTI # IRF540ZLPBF
Infineon Technologies AGTrans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF540ZLPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tube
Americas - 0
  • 4000:$0.4139
  • 6000:$0.3999
  • 10000:$0.3849
  • 20000:$0.3719
  • 40000:$0.3649
IRF540ZLPBF
DISTI # SP001559652
Infineon Technologies AGTrans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-262 (Alt: SP001559652)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€0.6619
  • 10:€0.5879
  • 25:€0.5299
  • 50:€0.4809
  • 100:€0.4409
  • 500:€0.4069
  • 1000:€0.3779
IRF540ZLPBF
DISTI # 49AC0323
Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes3430
  • 1:$1.1900
  • 10:$1.0100
  • 100:$0.7750
  • 500:$0.6850
  • 1000:$0.5400
IRF540ZLPBF
DISTI # 70017276
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 21 Milliohms,ID 36A,TO-262,PD 92W,VGS +/-20
RoHS: Compliant
0
  • 1:$2.5800
  • 2:$2.5280
  • 5:$2.4510
  • 10:$2.3480
  • 25:$2.1930
IRF540ZLPBF
DISTI # 942-IRF540ZLPBF
Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
RoHS: Compliant
1348
  • 1:$1.1900
  • 10:$1.0100
  • 100:$0.7750
  • 500:$0.6850
  • 1000:$0.5400
IRF540ZLPBF
DISTI # 2839479
Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262
RoHS: Compliant
3430
  • 5:$1.9500
  • 25:$1.7000
  • 100:$1.3900
  • 250:$1.1700
  • 500:$1.0100
  • 1000:$0.9600
  • 5000:$0.9100
IRF540ZLPBF
DISTI # 2839479
Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262
RoHS: Compliant
3495
  • 5:£0.8680
  • 25:£0.7800
  • 100:£0.5990
  • 250:£0.5640
  • 500:£0.5280
Immagine Parte # Descrizione
IRF540NLPBF

Mfr.#: IRF540NLPBF

OMO.#: OMO-IRF540NLPBF

MOSFET MOSFT 100V 33A 44mOhm 47.3nC
IRF540(N)

Mfr.#: IRF540(N)

OMO.#: OMO-IRF540-N--1190

Nuovo e originale
IRF540N

Mfr.#: IRF540N

OMO.#: OMO-IRF540N-1190

MOSFET Transistor, N-Channel, TO-220AB
IRF540NPBF,IRF5305PBF

Mfr.#: IRF540NPBF,IRF5305PBF

OMO.#: OMO-IRF540NPBF-IRF5305PBF-1190

Nuovo e originale
IRF540NSTRLPBF,IRF540NS,

Mfr.#: IRF540NSTRLPBF,IRF540NS,

OMO.#: OMO-IRF540NSTRLPBF-IRF540NS--1190

Nuovo e originale
IRF540P

Mfr.#: IRF540P

OMO.#: OMO-IRF540P-1190

Nuovo e originale
IRF540PBF,IRF540

Mfr.#: IRF540PBF,IRF540

OMO.#: OMO-IRF540PBF-IRF540-1190

Nuovo e originale
IRF543FI

Mfr.#: IRF543FI

OMO.#: OMO-IRF543FI-1190

Nuovo e originale
IRF543NS

Mfr.#: IRF543NS

OMO.#: OMO-IRF543NS-1190

Nuovo e originale
IRF540ZSTRRPBF

Mfr.#: IRF540ZSTRRPBF

OMO.#: OMO-IRF540ZSTRRPBF-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di IRF540ZLPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,55 USD
0,55 USD
10
0,52 USD
5,20 USD
100
0,49 USD
49,26 USD
500
0,47 USD
232,60 USD
1000
0,44 USD
437,90 USD
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