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IGZ50N65H5XKSA1

IGZ50N65H5XKSA1
Mfr. #:
IGZ50N65H5XKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT 650V 50A SGL TO-247-4
Ciclo vitale:
Nuovo da questo produttore.
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IGZ50N65H5XKSA1 Scheda dati
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 650V 85A 4-Pin TO-247 Tube
***ronik
IGBT 650V 50A 1,65V TO247-3
***i-Key
IGBT 650V 50A SGL TO-247-4
***ukat
650V 85A 273W TO247-4
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Parte # Mfg. Descrizione Azione Prezzo
IGZ50N65H5XKSA1
DISTI # IGZ50N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V 50A SGL TO-247-4
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$3.9537
IGZ50N65H5XKSA1
DISTI # SP001160052		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 4-Pin TO-247 Tube (Alt: SP001160052)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 150
  • 500:€2.0900
  • 1000:€2.0900
  • 50:€2.1900
  • 100:€2.1900
  • 25:€2.2900
  • 10:€2.5900
  • 1:€3.1900
IGZ50N65H5XKSA1
DISTI # IGZ50N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 4-Pin TO-247 Tube - Bulk (Alt: IGZ50N65H5XKSA1)
RoHS: Compliant
Min Qty: 151
Container: Bulk		Americas - 0
  • 755:$2.0900
  • 1510:$2.0900
  • 453:$2.1900
  • 151:$2.2900
  • 302:$2.2900
IGZ50N65H5XKSA1
DISTI # IGZ50N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 4-Pin TO-247 Tube - Rail/Tube (Alt: IGZ50N65H5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.3900
  • 2400:$2.3900
  • 960:$2.4900
  • 480:$2.5900
  • 240:$2.6900
IGZ50N65H5XKSA1
DISTI # 726-IGZ50N65H5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
  • 1:$5.1200
  • 10:$4.3500
  • 100:$3.7700
IGZ50N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel
RoHS: Not Compliant		150
  • 1000:$2.1800
  • 500:$2.3000
  • 100:$2.3900
  • 25:$2.5000
  • 1:$2.6900
IGZ50N65H5XKSA1
DISTI # IGZ50N65H5		Infineon Technologies AG650V 85A 273W TO247-4
RoHS: Compliant		88
  • 1:€6.0000
  • 10:€3.0000
  • 50:€2.0000
  • 100:€1.9300
Immagine Parte # Descrizione
IGZ50N65H5XKSA1

Mfr.#: IGZ50N65H5XKSA1

OMO.#: OMO-IGZ50N65H5XKSA1

 IGBT Transistors IGBT PRODUCTS
IGZ50N65H5

Mfr.#: IGZ50N65H5

OMO.#: OMO-IGZ50N65H5-1190

 650V,85A,High Speed IGBT
IGZ50N65H5XKSA1

Mfr.#: IGZ50N65H5XKSA1

OMO.#: OMO-IGZ50N65H5XKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V 50A SGL TO-247-4
Disponibilità
Azione:
Available
Su ordine:
1500
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