PD57018TR-E

PD57018TR-E
Mfr. #:
PD57018TR-E
Produttore:
STMicroelectronics
Descrizione:
RF MOSFET Transistors POWER R.F.
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PD57018TR-E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
PD57018TR-E maggiori informazioni PD57018TR-E Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Canale N
Tecnologia:
si
Id - Corrente di scarico continua:
2.5 A
Vds - Tensione di rottura Drain-Source:
65 V
Rds On - Resistenza Drain-Source:
760 mOhms
Guadagno:
16.5 dB
Potenza di uscita:
18 W
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerSO-10RF-Formed-4
Confezione:
Bobina
Configurazione:
Separare
Altezza:
3.5 mm
Lunghezza:
7.5 mm
Frequenza operativa:
1 GHz
Serie:
PD57018-E
Tipo:
MOSFET di potenza RF
Larghezza:
9.4 mm
Marca:
STMicroelectronics
Modalità canale:
Aumento
Sensibile all'umidità:
Pd - Dissipazione di potenza:
31.7 W
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
600
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
20 V
Unità di peso:
0.105822 oz
Tags
PD5701, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) T/R
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***th Star Micro
Transistor MOSFET N-CH 65V 2.5A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-1
***(Formerly Allied Electronics)
IRF7103PBF Dual N-channel MOSFET Transistor, 3 A, 50 V, 8-Pin SOIC | Infineon IRF7103PBF
***eco
Transistor MOSFET N Channel 50 Volt 3 Amp 8-Pin SOIC Tape and Reel
***itex
Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 50 V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8
***et Japan
Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R
***nell
MOSFET, DUAL NN LOGIC SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Di
***ark
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:50V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:3A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7103TRPBF.
***(Formerly Allied Electronics)
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W
***ure Electronics
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
***enic
60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***nsix Microsemi
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No
***nell
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Parte # Mfg. Descrizione Azione Prezzo
PD57018TR-E
DISTI # V72:2272_17706242
STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
RoHS: Compliant
335
  • 250:$28.8500
  • 100:$30.3200
  • 25:$33.3100
  • 10:$34.6500
  • 1:$37.4500
PD57018TR-E
DISTI # 497-6477-1-ND
STMicroelectronicsTRANSISTOR RF POWERSO-10
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    PD57018TR-E
    DISTI # 497-6477-6-ND
    STMicroelectronicsTRANSISTOR RF POWERSO-10
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      PD57018TR-E
      DISTI # 497-6477-2-ND
      STMicroelectronicsTRANSISTOR RF POWERSO-10
      RoHS: Compliant
      Min Qty: 600
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 600:$23.1702
      PD57018TR-E
      DISTI # 27537212
      STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
      RoHS: Compliant
      335
      • 250:$28.8600
      • 100:$30.3100
      • 25:$33.3300
      • 10:$34.6700
      • 1:$37.5400
      PD57018TR-E
      DISTI # PD57018TR-E
      STMicroelectronicsTrans MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R - Tape and Reel (Alt: PD57018TR-E)
      RoHS: Compliant
      Min Qty: 600
      Container: Reel
      Americas - 0
      • 600:$25.0900
      • 1200:$23.8900
      • 2400:$22.8900
      • 3600:$21.7900
      • 6000:$21.3900
      PD57018-E
      DISTI # 511-PD57018-E
      STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
      RoHS: Compliant
      92
      • 1:$32.4100
      • 5:$32.0700
      • 10:$29.8900
      • 25:$28.5500
      • 100:$25.5300
      • 250:$24.3500
      PD57018TR-E
      DISTI # 511-PD57018TR-E
      STMicroelectronicsRF MOSFET Transistors POWER R.F.
      RoHS: Compliant
      0
      • 1:$32.4100
      • 5:$32.0700
      • 10:$29.8900
      • 25:$28.5500
      • 100:$25.5300
      • 250:$24.3500
      • 600:$23.1800
      PD57018TR-E
      DISTI # PD57018TR-E
      STMicroelectronicsRF POWER TRANSISTOR
      RoHS: Compliant
      0
      • 600:$23.0600
      • 1000:$21.9000
      PD57018TR-E
      DISTI # C1S730200364012
      STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
      RoHS: Compliant
      335
      • 250:$28.9200
      • 100:$30.2800
      • 25:$33.5700
      • 10:$34.8600
      • 1:$37.4400
      Immagine Parte # Descrizione
      PD57006S

      Mfr.#: PD57006S

      OMO.#: OMO-PD57006S

      RF MOSFET Transistors N-Ch 65 Volt 1.0 Amp
      PD57060STR-E

      Mfr.#: PD57060STR-E

      OMO.#: OMO-PD57060STR-E

      RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
      PD57002SK

      Mfr.#: PD57002SK

      OMO.#: OMO-PD57002SK-1190

      Nuovo e originale
      PD57006

      Mfr.#: PD57006

      OMO.#: OMO-PD57006-1152

      RF MOSFET, N CHANNEL, 28V, POWERSO-10RF, Drain Source Voltage Vds:65V, Continuous Drain Current Id:1A, Power Dissipation Pd:20W, Operating Frequency Min:925MHz, Operating Frequency Max:960MHz, R
      PD57006E

      Mfr.#: PD57006E

      OMO.#: OMO-PD57006E-1190

      Nuovo e originale
      PD57045S-E

      Mfr.#: PD57045S-E

      OMO.#: OMO-PD57045S-E-STMICROELECTRONICS

      FET RF 65V 945MHZ PWRSO-10
      PD57070

      Mfr.#: PD57070

      OMO.#: OMO-PD57070-1190

      Nuovo e originale
      PD57070SE

      Mfr.#: PD57070SE

      OMO.#: OMO-PD57070SE-1190

      Nuovo e originale
      PD57018S-E

      Mfr.#: PD57018S-E

      OMO.#: OMO-PD57018S-E-STMICROELECTRONICS

      MOSFET 8 BITS MICROCONTR
      PD57030

      Mfr.#: PD57030

      OMO.#: OMO-PD57030-STMICROELECTRONICS

      FET RF 65V 945MHZ PWRSO-10
      Disponibilità
      Azione:
      Available
      Su ordine:
      4500
      Inserisci la quantità:
      Il prezzo attuale di PD57018TR-E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      32,41 USD
      32,41 USD
      5
      32,07 USD
      160,35 USD
      10
      29,89 USD
      298,90 USD
      25
      28,55 USD
      713,75 USD
      100
      25,53 USD
      2 553,00 USD
      250
      24,35 USD
      6 087,50 USD
      Iniziare con
      Prodotti più recenti
      • PWD13F60 High-Density Power Driver
        STMicroelectronics' PWD13F60 integrated power MOSFET full bridge with embedded gate drivers in a 13 mm x 10 mm outline.
      • STSPIN32F0 Motor-Control System
        STMicroelectronics' STSPIN32F0 motor-control system-in-package combines the power and flexibility of a microcontroller-based drive with ease of use and space efficiency.
      • Compare PD57018TR-E
        PD57018 vs PD57018E vs PD57018S
      • STripFET VI DeepGATE Series Power MOSFETs
        STMicroelectronics' 80 V MOSFETs with DeepGATE process integration result a more efficient and denser design in applications such as motor control and DC/DC converters.
      • ESDA8P30-1T2 TVS Diode
        STMicroelectronics' ESDA8P30-1T2 unidirectional, single-line TVS diode provides USB VBUS, power supply, and battery protection.
      • CLOUD-ST25TA02KB Evaluation Board
        STMicroelectronics' CLOUD-ST25TA02KB evaluation board for the ST25TA02KB-P device can be configured for various uses such as indicating field detection.
      Top