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IPD088N06N3 G

IPD088N06N3 G
Mfr. #:
IPD088N06N3 G
Produttore:
Infineon Technologies
Descrizione:
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPD088N06N3 G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Chip IC
Serie
OptiMOS
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
IPD088N06N3GBTMA1 IPD088N06N3GXT SP000453620
Unità di peso
0.139332 oz
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-252-3, DPak (2 Leads + Tab), SC-63
Tecnologia
si
Temperatura di esercizio
-55°C ~ 175°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PG-TO252-3
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
71W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
60V
Ingresso-Capacità-Ciss-Vds
3900pF @ 30V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
50A (Tc)
Rds-On-Max-Id-Vgs
8.8 mOhm @ 50A, 10V
Vgs-th-Max-Id
4V @ 34μA
Gate-Carica-Qg-Vgs
48nC @ 10V
Pd-Power-Dissipazione
71 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
5 ns
Ora di alzarsi
40 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
50 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistenza
8.8 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
20 ns
Tempo di ritardo all'accensione tipico
15 ns
Modalità canale
Aumento
Tags
IPD088N06N3G, IPD088N06, IPD088, IPD08, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
IPD088N06N3GBTMA1
DISTI # V72:2272_06384375		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		425
  • 250:$0.6615
  • 100:$0.6969
  • 25:$0.7934
  • 10:$0.8142
  • 1:$0.9302
IPD088N06N3GBTMA1
DISTI # V36:1790_06384375		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500:$0.4221
IPD088N06N3GBTMA1
DISTI # IPD088N06N3GBTMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		29551In Stock
  • 1000:$0.4886
  • 500:$0.6189
  • 100:$0.7981
  • 10:$1.0100
  • 1:$1.1400
IPD088N06N3GBTMA1
DISTI # IPD088N06N3GBTMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		29551In Stock
  • 1000:$0.4886
  • 500:$0.6189
  • 100:$0.7981
  • 10:$1.0100
  • 1:$1.1400
IPD088N06N3GBTMA1
DISTI # IPD088N06N3GBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		27500In Stock
  • 12500:$0.4048
  • 5000:$0.4206
  • 2500:$0.4427
IPD088N06N3GBTMA1
DISTI # 32892180		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		5000
  • 2500:$0.3165
IPD088N06N3 G
DISTI # 30885394		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252
RoHS: Compliant		4500
  • 200:$0.5967
  • 100:$0.6401
  • 50:$0.9065
  • 24:$0.9958
IPD088N06N3GBTMA1
DISTI # 31079594		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		425
  • 250:$0.7111
  • 100:$0.7492
  • 25:$0.8529
  • 20:$0.8753
IPD088N06N3G
DISTI # IPD088N06N3 G		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 (Alt: IPD088N06N3 G)
RoHS: Compliant
Min Qty: 2500		Asia - 0
  • 2500:$0.3939
  • 5000:$0.3829
  • 7500:$0.3726
  • 12500:$0.3628
  • 25000:$0.3580
  • 62500:$0.3535
  • 125000:$0.3490
IPD088N06N3G
DISTI # SP000453620		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 (Alt: SP000453620)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 2500:€0.4709
  • 5000:€0.3849
  • 10000:€0.3529
  • 15000:€0.3259
  • 25000:€0.3029
IPD088N06N3G
DISTI # SP000453620		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 (Alt: SP000453620)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 2500:€0.5619
  • 5000:€0.4829
  • 10000:€0.4109
  • 15000:€0.3529
  • 25000:€0.3349
IPD088N06N3GXT
DISTI # IPD088N06N3GBTMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 T/R - Tape and Reel (Alt: IPD088N06N3GBTMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3309
  • 5000:$0.3189
  • 10000:$0.3069
  • 15000:$0.2969
  • 25000:$0.2919
IPD088N06N3GBTMA1
DISTI # 50Y2024		Infineon Technologies AGMOSFET Transistor, N Channel, 50 A, 60 V, 0.0071 ohm, 10 V, 3 V RoHS Compliant: Yes3246
  • 1000:$0.4320
  • 500:$0.5470
  • 250:$0.5830
  • 100:$0.6190
  • 50:$0.6810
  • 25:$0.7430
  • 10:$0.8050
  • 1:$0.9400
IPD088N06N3 G
DISTI # 726-IPD088N06N3G		Infineon Technologies AGMOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3
RoHS: Compliant		9656
  • 1:$0.9400
  • 10:$0.8050
  • 100:$0.6190
  • 500:$0.5470
  • 1000:$0.4320
  • 2500:$0.3830
  • 10000:$0.3690
IPD088N06N3 GInfineon Technologies AG 240
  • 215:$1.2950
  • 98:$1.4000
  • 1:$2.8000
IPD088N06N3GBTMA1
DISTI # 8275081P		Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS P3 TO252, RL4925
  • 1250:£0.3560
  • 500:£0.4470
  • 125:£0.5070
IPD088N06N3GBTMA1
DISTI # IPD088N06N3GBTMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,50A,71W,PG-TO252-31402
  • 1:$0.6559
  • 3:$0.5647
  • 10:$0.4540
  • 100:$0.3937
  • 1000:$0.3668
IPD088N06N3 G
DISTI # TMOSP9746		Infineon Technologies AGN-CH60V50A9mOhm TO252-3
RoHS: Compliant		Stock DE - 5000Stock HK - 0Stock US - 0
  • 2500:$0.5197
  • 5000:$0.4900
  • 7500:$0.4603
  • 10000:$0.4157
  • 15000:$0.4009
IPD088N06N3GInfineon Technologies AG 1961
    IPD088N06N3 G  348
      IPD088N06N3 G
      DISTI # C1S322000194414      		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK
      RoHS: Compliant      		4500
      • 2500:$0.4200
      • 1000:$0.4320
      • 500:$0.4540
      • 200:$0.4680
      • 100:$0.5020
      • 50:$0.7110
      • 10:$0.7810
      • 5:$0.8480
      IPD088N06N3 GInfineon Technologies AGRoHS(ship within 1day)300
      • 1:$1.9300
      • 10:$1.4500
      • 50:$0.9700
      • 100:$0.7700
      • 500:$0.7200
      • 1000:$0.7000
      IPD088N06N3GInfineon Technologies AG60V,8.8m,50A,N-Channel Power MOSFET1900
      • 1:$0.6900
      • 100:$0.5700
      • 500:$0.5100
      • 1000:$0.4900
      IPD088N06N3GBTMA1
      DISTI # 2480819      		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, TO-252-3
      RoHS: Compliant      		3246
      • 500:£0.4410
      • 250:£0.5040
      • 100:£0.5680
      • 25:£0.7180
      • 5:£0.8410
      IPD088N06N3GBTMA1
      DISTI # 2480819RL      		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, TO-252-3
      RoHS: Compliant      		0
      • 1000:$0.6510
      • 500:$0.8240
      • 100:$0.9330
      • 10:$1.2100
      • 1:$1.4200
      IPD088N06N3GBTMA1
      DISTI # 2480819      		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, TO-252-3
      RoHS: Compliant      		3291
      • 1000:$0.6510
      • 500:$0.8240
      • 100:$0.9330
      • 10:$1.2100
      • 1:$1.4200
      Immagine Parte # Descrizione
      IPD088N06N3 G

      Mfr.#: IPD088N06N3 G

      OMO.#: OMO-IPD088N06N3-G

      		 MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3
      IPD088N06N3GBTMA1

      Mfr.#: IPD088N06N3GBTMA1

      OMO.#: OMO-IPD088N06N3GBTMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 60V 50A TO252-3
      IPD088N04L

      Mfr.#: IPD088N04L

      OMO.#: OMO-IPD088N04L-1190

      		 Nuovo e originale
      IPD088N04L G

      Mfr.#: IPD088N04L G

      OMO.#: OMO-IPD088N04L-G-1190

      		 MOSFET N-Ch 40V 50A DPAK-2
      IPD088N04LG

      Mfr.#: IPD088N04LG

      OMO.#: OMO-IPD088N04LG-1190

      		 Nuovo e originale
      IPD088N04LGBTMA1

      Mfr.#: IPD088N04LGBTMA1

      OMO.#: OMO-IPD088N04LGBTMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 40V 50A TO252-3
      IPD088N06N3

      Mfr.#: IPD088N06N3

      OMO.#: OMO-IPD088N06N3-1190

      		 Nuovo e originale
      IPD088N06N3 G

      Mfr.#: IPD088N06N3 G

      OMO.#: OMO-IPD088N06N3-G-1190

      		 Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252
      IPD088N06N3G

      Mfr.#: IPD088N06N3G

      OMO.#: OMO-IPD088N06N3G-1190

      		 Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 (Alt: IPD088N06N3 G)
      Disponibilità
      Azione:
      Available
      Su ordine:
      1500
      Inserisci la quantità:
      Il prezzo attuale di IPD088N06N3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,55 USD
      0,55 USD
      10
      0,53 USD
      5,26 USD
      100
      0,50 USD
      49,82 USD
      500
      0,47 USD
      235,25 USD
      1000
      0,44 USD
      442,80 USD
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