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SGF80N60UFTU

SGF80N60UFTU
Mfr. #:
SGF80N60UFTU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors Discrete Hi-P IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SGF80N60UFTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3PF-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione massima dell'emettitore di gate:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
SGF80N60UF
Confezione:
Tubo
Corrente continua del collettore Ic Max:
80 A
Altezza:
16.7 mm
Lunghezza:
15.7 mm
Larghezza:
5.7 mm
Marca:
ON Semiconductor / Fairchild
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
360
sottocategoria:
IGBT
Unità di peso:
0.245577 oz
Tags
SGF80, SGF8, SGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
***emi
Discrete, High Performance IGBT
*** Electronic Components
IGBT Transistors Discrete Hi-P IGBT
***nell
SGF80N60UFTU, SINGLE BIPOLAR TRANSISTORS;
***rchild Semiconductor
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-3PF Rail
***el Electronic
FAIRCHILD SEMICONDUCTOR FGAF40N60UFTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins
***nell
IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
***th Star Micro
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Product Highlights: High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance
***ical
Trans IGBT Chip N=-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-3PF Rail
***hard Electronics
FAIRCHILD SEMICONDUCTOR FGAF40N60UFDTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins
***nell
IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s Field Stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***ure Electronics
SGF23N60UF Series 600 V 23 A 75 W Through Hole PT IGBT - TO-3PF
***Yang
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Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel
***i-Key
IGBT ULTRA FAST 600V 12A TO-3PF
***ark
Ptpigbt To3Pf 12A 600V Rohs Compliant: Yes
***i-Key Marketplace
INSULATED GATE BIPOLAR TRANSISTO
***rchild Semiconductor
Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature.
***ical
Trans IGBT Chip N=-CH 1500V 10A 62500mW 3-Pin(3+Tab) TO-3PF Rail
***nell
IGBT, 1.5KV, 10A, 150DEG C, 62.5W; Available until stocks are exhausted
***rchild Semiconductor
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.
Parte # Mfg. Descrizione Azione Prezzo
SGF80N60UFTU
DISTI # 26885511		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 110000mW 3-Pin(3+Tab) TO-3PF Tube1440
  • 720:$5.2985
  • 360:$5.4641
SGF80N60UFTU
DISTI # SGF80N60UFTU-ND		ON SemiconductorIGBT 600V 80A 110W TO3PF
RoHS: Compliant
Min Qty: 360
Container: Tube		Limited Supply - Call
  • 360:$4.6496
SGF80N60UFTU
DISTI # SGF80N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail - Rail/Tube (Alt: SGF80N60UFTU)
RoHS: Compliant
Min Qty: 360
Container: Tube		Americas - 0
  • 360:$3.0900
  • 720:$2.9900
  • 1440:$2.9900
  • 2160:$2.9900
  • 3600:$2.8900
SGF80N60UFTU
DISTI # SGF80N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail (Alt: SGF80N60UFTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€4.0900
  • 10:€3.2900
  • 25:€3.1900
  • 50:€2.9900
  • 100:€2.8900
  • 500:€2.8900
  • 1000:€2.7900
SGF80N60UFTU
DISTI # 512-SGF80N60UFTU		ON SemiconductorIGBT Transistors Discrete Hi-P IGBT
RoHS: Compliant		0
    SGF80N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
    RoHS: Compliant    		23040
    • 1000:$5.5600
    • 500:$5.8500
    • 100:$6.0900
    • 25:$6.3500
    • 1:$6.8400
    Immagine Parte # Descrizione
    SGF80N60UFTU

    Mfr.#: SGF80N60UFTU

    OMO.#: OMO-SGF80N60UFTU

    		 IGBT Transistors Discrete Hi-P IGBT
    SGF80N60UF

    Mfr.#: SGF80N60UF

    OMO.#: OMO-SGF80N60UF-1190

    		 Nuovo e originale
    SGF80N60UF G80N60UF

    Mfr.#: SGF80N60UF G80N60UF

    OMO.#: OMO-SGF80N60UF-G80N60UF-1190

    		 Nuovo e originale
    SGF80N60UFTUPBF

    Mfr.#: SGF80N60UFTUPBF

    OMO.#: OMO-SGF80N60UFTUPBF-1190

    		 Nuovo e originale
    SGF80N60UFTU

    Mfr.#: SGF80N60UFTU

    OMO.#: OMO-SGF80N60UFTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Discrete Hi-P IGBT
    Disponibilità
    Azione:
    Available
    Su ordine:
    4000
    Inserisci la quantità:
    Il prezzo attuale di SGF80N60UFTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    360
    4,42 USD
    1 591,20 USD
    720
    4,03 USD
    2 901,60 USD
    1080
    3,51 USD
    3 790,80 USD
    2520
    3,38 USD
    8 517,60 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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