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SI4488DY-T1-GE3

SI4488DY-T1-GE3
Mfr. #:
SI4488DY-T1-GE3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET 150V 5.0A 3.1W 50mohm @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4488DY-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SI4488DY-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
VISHAY
categoria di prodotto
FET - Single
Confezione
Bobina
Alias ​​parziali
SI4488DY-GE3
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SO-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
1.56 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
3.5 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Rds-On-Drain-Source-Resistenza
50 mOhms
Polarità del transistor
Canale N
Tags
SI4488DY-T, SI4488D, SI4488, SI448, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5A; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,DIODE,150V,5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descrizione Azione Prezzo
SI4488DY-T1-GE3
DISTI # V72:2272_09216519		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant		2972
  • 1000:$0.9829
  • 500:$1.1554
  • 250:$1.2707
  • 100:$1.3159
  • 25:$1.5285
  • 10:$1.6375
  • 1:$1.9008
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2160In Stock
  • 1000:$0.9839
  • 500:$1.1875
  • 100:$1.5268
  • 10:$1.9000
  • 1:$2.1000
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2160In Stock
  • 1000:$0.9839
  • 500:$1.1875
  • 100:$1.5268
  • 10:$1.9000
  • 1:$2.1000
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.8894
SI4488DY-T1-GE3
DISTI # 25790120		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant		2972
  • 1000:$0.9829
  • 500:$1.1554
  • 250:$1.2707
  • 100:$1.3159
  • 25:$1.5286
  • 10:$1.6375
  • 7:$1.9008
SI4488DY-T1-GE3
DISTI # 31237008		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.8926
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4488DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5769
  • 5000:$0.5599
  • 10000:$0.5369
  • 15000:$0.5219
  • 25000:$0.5079
SI4488DY-T1-GE3
DISTI # 15R5041		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W RoHS Compliant: Yes0
  • 1:$1.4300
  • 1000:$1.3500
  • 2000:$1.2800
  • 4000:$1.1500
  • 6000:$1.1100
  • 10000:$1.0700
SI4488DY-T1-GE3
DISTI # 23T8512		Vishay IntertechnologiesMOSFET Transistor, N Channel, 5 A, 150 V, 0.041 ohm, 10 V, 2 V RoHS Compliant: Yes2229
  • 1:$2.3200
  • 10:$1.9300
  • 25:$1.7900
  • 50:$1.6400
  • 100:$1.5000
  • 250:$1.4100
  • 500:$1.3100
SI4488DY-T1-GE3
DISTI # 781-SI4488DY-GE3		Vishay IntertechnologiesMOSFET 150V Vds 20V Vgs SO-8
RoHS: Compliant		1460
  • 1:$2.3200
  • 10:$1.9300
  • 100:$1.5000
  • 500:$1.3100
  • 1000:$1.0900
  • 2500:$1.0100
SI4488DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.5A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 2500
    SI4488DY-T1-GE3
    DISTI # 1858958RL    		Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant    		0
    • 1:$3.3500
    • 10:$3.0300
    • 100:$2.4400
    • 500:$1.9000
    • 1000:$1.5700
    SI4488DY-T1-GE3
    DISTI # 1858958    		Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant    		2229
    • 1:$3.3500
    • 10:$3.0300
    • 100:$2.4400
    • 500:$1.9000
    • 1000:$1.5700
    SI4488DY-T1-GE3
    DISTI # C1S803600999653    		Vishay IntertechnologiesMOSFETs2972
    • 250:$1.2707
    • 100:$1.3159
    • 25:$1.5286
    • 10:$1.6375
    SI4488DY-T1-GE3
    DISTI # 1858958    		Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant    		2474
    • 5:£1.6100
    • 25:£1.4900
    • 100:£1.1500
    • 250:£1.0400
    • 500:£0.9380
    Immagine Parte # Descrizione
    SI4488DY-T1-GE3

    Mfr.#: SI4488DY-T1-GE3

    OMO.#: OMO-SI4488DY-T1-GE3

    		 MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-E3

    Mfr.#: SI4488DY-T1-E3

    OMO.#: OMO-SI4488DY-T1-E3

    		 MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-GE3

    Mfr.#: SI4488DY-T1-GE3

    OMO.#: OMO-SI4488DY-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 150V 5.0A 3.1W 50mohm @ 10V
    SI4488DY-T1-E3-CUT TAPE

    Mfr.#: SI4488DY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4488DY-T1-E3-CUT-TAPE-1190

    		 Nuovo e originale
    SI4488DY

    Mfr.#: SI4488DY

    OMO.#: OMO-SI4488DY-1190

    		 MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-E3

    Mfr.#: SI4488DY-T1-E3

    OMO.#: OMO-SI4488DY-T1-E3-VISHAY

    		 MOSFET N-CH 150V 3.5A 8-SOIC
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di SI4488DY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
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    Prezzo unitario
    est. Prezzo
    1
    0,76 USD
    0,76 USD
    10
    0,72 USD
    7,24 USD
    100
    0,69 USD
    68,57 USD
    500
    0,65 USD
    323,80 USD
    1000
    0,61 USD
    609,50 USD
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