QPD1010

QPD1010
Mfr. #:
QPD1010
Produttore:
Qorvo
Descrizione:
RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
QPD1010 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
QPD1010 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
TriQuint (Qorvo)
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
QPD
Confezione
Cialda
Alias ​​parziali
1132873
Stile di montaggio
SMD/SMT
Intervallo operativo di temperatura
- 40 C to + 85 C
Pacchetto-Custodia
QFN-16
Tecnologia
GaN SiC
Configurazione
Separare
Tipo a transistor
HEMT
Guadagno
24.7 dB
Potenza di uscita
11 W
Pd-Power-Dissipazione
13.5 W
Massima temperatura di esercizio
+ 85 C
Temperatura di esercizio minima
- 40 C
Frequenza operativa
DC to 4 GHz
Id-Continuo-Scarico-Corrente
400 mA
Vds-Drain-Source-Breakdown-Voltage
50 V
Polarità del transistor
Canale N
Kit di sviluppo
QPD1010-EVB1
Vgs-Gate-Source-Breakdown-Voltage
- 2.8 V
Tags
QPD101, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC - 4.0 GHz, 10 W, 50 V, 3 x 3 mm, GaN
QPD1009 & QPD1010 GaN RF Transistors
Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
Parte # Mfg. Descrizione Azione Prezzo
QPD1010
DISTI # 772-QPD1010
QorvoRF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
RoHS: Compliant
40
  • 1:$20.5500
  • 25:$17.7700
  • 100:$15.3700
  • 250:$14.3000
  • 500:$13.3000
QPD1010-EVB1
DISTI # 772-QPD1010-EVB1
QorvoRF Development Tools DC-4GHz 10W 28-50V Eval Board
RoHS: Compliant
3
  • 1:$875.0000
Immagine Parte # Descrizione
QPD0060SR

Mfr.#: QPD0060SR

OMO.#: OMO-QPD0060SR

RF Amplifier 100W GaN25HV
QPD1003

Mfr.#: QPD1003

OMO.#: OMO-QPD1003

RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
QPD1019

Mfr.#: QPD1019

OMO.#: OMO-QPD1019

RF JFET Transistors 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
QPD1016

Mfr.#: QPD1016

OMO.#: OMO-QPD1016-1152

RF JFET Transistors 3V GSM PAin MLP (Pb-Free)
QPD1025L

Mfr.#: QPD1025L

OMO.#: OMO-QPD1025L-1152

RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
QPDS-T932

Mfr.#: QPDS-T932

OMO.#: OMO-QPDS-T932-1190

Nuovo e originale
QPD W 4PE1 5 9-14 M25 FC B

Mfr.#: QPD W 4PE1 5 9-14 M25 FC B

OMO.#: OMO-QPD-W-4PE1-5-9-14-M25-FC-B-1190

Panel feed-through, QUICKON connection, No. of pos.: 4+PE, 0.5 mm² . 1.5 mm², 690 V, 17.5 A, black, With
QPD2730

Mfr.#: QPD2730

OMO.#: OMO-QPD2730-318

RF JFET Transistors QPD2730, 30W Antenna Dual Channel GaN
QPDF-320-48

Mfr.#: QPDF-320-48

OMO.#: OMO-QPDF-320-48-QUALTEK

Switching Power Supplies 48V 6.7A 320W P/S SINGLE OUTPUT
QPD-150-48

Mfr.#: QPD-150-48

OMO.#: OMO-QPD-150-48-QUALTEK

Switching Power Supplies 48V 3/3A 150W P/S SINGLE OUTPUT
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di QPD1010 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
19,95 USD
19,95 USD
10
18,95 USD
189,52 USD
100
17,96 USD
1 795,50 USD
500
16,96 USD
8 478,75 USD
1000
15,96 USD
15 960,00 USD
Iniziare con
Top