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SI1026X-T1-GE3

SI1026X-T1-GE3
Mfr. #:
SI1026X-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 60V Vds 20V Vgs SC89-6
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI1026X-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1026X-T1-GE3 DatasheetSI1026X-T1-GE3 Datasheet (P4-P6)SI1026X-T1-GE3 Datasheet (P7)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SC-89-6
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
500 mA
Rds On - Resistenza Drain-Source:
1.4 Ohms
Vgs th - Tensione di soglia gate-source:
1 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
600 pC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
280 mW
Configurazione:
Dual
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Altezza:
0.6 mm
Lunghezza:
1.66 mm
Serie:
SI1
Tipo di transistor:
2 N-Channel
Larghezza:
1.2 mm
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
200 mS
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
20 ns
Tempo di ritardo di accensione tipico:
15 ns
Parte # Alias:
SI1026X-GE3
Unità di peso:
0.001129 oz
Tags
SI1026X-T1, SI1026X-T, SI1026X, SI1026, SI102, SI10, SI1
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI1026X-T1-GE3 Dual N-channel MOSFET Transistor; 0.3 A; 60 V; 6-Pin SC-89
***ure Electronics
Single N-Channel 60 V 3 O 250 mW Surface Mount Power Mosfet - SC-89-6
***ment14 APAC
N CHANNEL, MOSFET, 60V, 500mA, SC-89; Tr; N CHANNEL, MOSFET, 60V, 500mA, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:1.4V; Threshold Voltage Vgs:20V
Parte # Mfg. Descrizione Azione Prezzo
SI1026X-T1-GE3
DISTI # V72:2272_09215313		Vishay IntertechnologiesTrans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R
RoHS: Compliant		812
  • 500:$0.2097
  • 250:$0.2604
  • 100:$0.2607
  • 25:$0.3361
  • 10:$0.3369
  • 1:$0.4161
SI1026X-T1-GE3
DISTI # SI1026X-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 60V 0.305A SC89-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		76947In Stock
  • 1000:$0.1776
  • 500:$0.2298
  • 100:$0.3134
  • 10:$0.4180
  • 1:$0.5000
SI1026X-T1-GE3
DISTI # SI1026X-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 60V 0.305A SC89-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		76947In Stock
  • 1000:$0.1776
  • 500:$0.2298
  • 100:$0.3134
  • 10:$0.4180
  • 1:$0.5000
SI1026X-T1-GE3
DISTI # SI1026X-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 60V 0.305A SC89-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		75000In Stock
  • 3000:$0.1572
SI1026X-T1-GE3
DISTI # 31014349		Vishay IntertechnologiesTrans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R
RoHS: Compliant		3000
  • 3000:$0.1509
SI1026X-T1-GE3
DISTI # 31035481		Vishay IntertechnologiesTrans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R
RoHS: Compliant		812
  • 500:$0.2097
  • 250:$0.2604
  • 100:$0.2607
  • 46:$0.3361
SI1026X-T1-GE3
DISTI # 30607087		Vishay IntertechnologiesTrans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R
RoHS: Compliant		500
  • 500:$0.2384
  • 100:$0.2894
  • 50:$0.3443
  • 15:$0.5177
SI1026X-T1-GE3
DISTI # SI1026X-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 0.305A 6-Pin SOT-563F T/R - Tape and Reel (Alt: SI1026X-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1549
  • 6000:$0.1499
  • 12000:$0.1439
  • 18000:$0.1399
  • 30000:$0.1359
SI1026X-T1-GE3
DISTI # 16P3678		Vishay IntertechnologiesTrans MOSFET N-CH 60V 0.305A 6-Pin SOT-563F T/R - Product that comes on tape, but is not reeled (Alt: 16P3678)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.6120
  • 25:$0.4630
  • 50:$0.4030
  • 100:$0.3430
  • 250:$0.3130
  • 500:$0.2820
  • 1000:$0.2180
SI1026X-T1-GE3
DISTI # 16P3678		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 0.305A, SC-89-6,Transistor Polarity:N Channel,Continuous Drain Current Id:305mA,Drain Source Voltage Vds:60V,On Resistance Rds(on):1.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes584
  • 1000:$0.2280
  • 500:$0.2940
  • 250:$0.3260
  • 100:$0.3580
  • 50:$0.4200
  • 25:$0.4830
  • 1:$0.6380
SI1026X-T1-GE3
DISTI # 29X0510		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 0.305A, SC-89-6, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:305mA,Drain Source Voltage Vds:60V,On Resistance Rds(on):1.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 50000:$0.1420
  • 30000:$0.1490
  • 20000:$0.1600
  • 10000:$0.1710
  • 5000:$0.1850
  • 1:$0.1900
SI1026X-T1-GE3
DISTI # 70026182		Vishay SiliconixSI1026X-T1-GE3 Dual N-channel MOSFET Transistor,0.3 A,60 V,6-Pin SC-89
RoHS: Compliant		0
  • 3000:$0.1690
SI1026X-T1-GE3/BKN
DISTI # 70026345		Vishay SiliconixDUAL 60V (D-S) N-CH MOSFET W/ESD PR
RoHS: Compliant		0
  • 1:$0.2100
  • 2:$0.2000
  • 5:$0.1900
  • 10:$0.1810
  • 25:$0.1730
SI1026X-T1-GE3
DISTI # 781-SI1026X-T1-GE3		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SC89-6
RoHS: Compliant		16423
  • 1:$0.5100
  • 10:$0.3860
  • 100:$0.2860
  • 500:$0.2350
  • 1000:$0.1820
  • 3000:$0.1660
  • 6000:$0.1550
  • 9000:$0.1450
  • 24000:$0.1370
SI1026X-T1-GE3
DISTI # 7879046P		Vishay IntertechnologiesMOSFET N-CH 60V 305MA 1.4OHM SOT563F, RL470
  • 50:£0.2000
  • 250:£0.1680
  • 1000:£0.1350
  • 3000:£0.1310
SI1026X-T1-GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 3000
    SI1026XT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		Europe - 9000
      SI1026X-T1-GE3Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SC89-6
      RoHS: Compliant      		Americas - 6000
        SI1026X-T1-GE3
        DISTI # 2679671        		Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.305A, SC-89
        RoHS: Compliant        		0
        • 9000:£0.1390
        • 3000:£0.1460
        SI1026X-T1-GE3
        DISTI # C1S803600878095        		Vishay IntertechnologiesTrans MOSFET N-CH 60V 0.305A 6-Pin SOT-563F T/R
        RoHS: Compliant        		500
        • 500:$0.1870
        • 100:$0.2270
        • 50:$0.2700
        • 10:$0.4060
        • 1:$1.3500
        SI1026X-T1-GE3
        DISTI # C1S803601332855        		Vishay IntertechnologiesTrans MOSFET N-CH 60V 0.305A 6-Pin SOT-563F T/R
        RoHS: Compliant        		812
        • 250:$0.2592
        • 100:$0.2597
        • 25:$0.3343
        • 10:$0.3352
        SI1026X-T1-GE3
        DISTI # 2679671        		Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.305A, SC-89
        RoHS: Compliant        		0
        • 12000:$0.2630
        • 9000:$0.2670
        • 6000:$0.2740
        • 3000:$0.2820
        SI1026X-T1-GE3
        DISTI # 2646361        		Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.305A, SC-89
        RoHS: Compliant        		0
        • 1000:$0.2840
        • 500:$0.3670
        • 100:$0.5000
        • 10:$0.6670
        • 1:$0.7980
        SI1026X-T1-GE3
        DISTI # XSFP00000015520        		Vishay SiliconixSmall Signal Field-Effect Transistor, 4.8AI(D),30V,1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET, TO-236AB
        RoHS: Compliant        		9000
        • 3000:$0.2880
        • 9000:$0.2618
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        Disponibilità
        Azione:
        Available
        Su ordine:
        1990
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