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FGA40T65SHDF

FGA40T65SHDF
Mfr. #:
FGA40T65SHDF
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors FS3TIGBT TO3PN 40A 650V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGA40T65SHDF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGA40T65SHDF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3PN
Stile di montaggio:
Foro passante
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.81 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
80 A
Pd - Dissipazione di potenza:
268 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
FGA40T65SHDF
Confezione:
Tubo
Corrente continua del collettore Ic Max:
80 A
Marca:
ON Semiconductor / Fairchild
Corrente di dispersione gate-emettitore:
400 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Unità di peso:
0.225789 oz
Tags
FGA40T6, FGA40T, FGA40, FGA4, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3PN Rail
***ark
650V FS Gen3 Trench IGBT - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.
***ical
Trans IGBT Chip N=-CH 650V 80A 238000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
IGBT, 650 V, 40 A Field Stop Trench
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for welder application where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 650V, 40A Field Stop Trench
***ark
650V Fs Gen3 Trench Igbt / Rail
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer superior conduction andswitching performance and easy parallel operation. This device is well suited for the resonant or soft switching application suchas induction heating and MWO.
***ark
Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes
***(Formerly Allied Electronics)
NGTB40N65FL2WG; IGBT Transistor; 80 A 650 V; 1MHz; 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
***ure Electronics
IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Parte # Mfg. Descrizione Azione Prezzo
FGA40T65SHDF
DISTI # V99:2348_06359201		ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 5000:$1.9900
  • 2500:$2.0410
  • 1000:$2.1540
  • 500:$2.4840
  • 250:$2.7199
  • 100:$2.8460
  • 10:$3.1690
  • 1:$3.6380
FGA40T65SHDF
DISTI # FGA40T65SHDF-ND		ON SemiconductorIGBT 650V 80A 268W TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		444In Stock
  • 1350:$2.3373
  • 900:$2.7714
  • 450:$3.0886
  • 10:$3.9730
  • 1:$4.4200
FGA40T65SHDF
DISTI # 25845320		ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 250:$2.7200
  • 100:$2.8460
  • 10:$3.1690
  • 3:$3.6380
FGA40T65SHDF
DISTI # FGA40T65SHDF		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA40T65SHDF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.9900
  • 900:$1.9900
  • 1800:$1.9900
  • 2700:$1.9900
  • 4500:$1.8900
FGA40T65SHDF
DISTI # 512-FGA40T65SHDF		ON SemiconductorIGBT Transistors FS3TIGBT TO3PN 40A 650V
RoHS: Compliant		307
  • 1:$4.2100
  • 10:$3.5800
  • 100:$3.1100
  • 250:$2.9500
  • 500:$2.6400
  • 1000:$2.2300
  • 2500:$2.1200
FGA40T65SHDF
DISTI # C1S541901510110		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3PN Tube
RoHS: Compliant		450
  • 250:$2.7199
  • 100:$2.8460
  • 1:$3.6380
Immagine Parte # Descrizione
IHW30N135R3

Mfr.#: IHW30N135R3

OMO.#: OMO-IHW30N135R3

 IGBT Transistors IGBT PRODUCTS TrenchStop RC
IHW30N135R3

Mfr.#: IHW30N135R3

OMO.#: OMO-IHW30N135R3-1190

 Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247 - Bulk (Alt: IHW30N135R3)
Disponibilità
Azione:
284
Su ordine:
2267
Inserisci la quantità:
Il prezzo attuale di FGA40T65SHDF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,20 USD
4,20 USD
10
3,57 USD
35,70 USD
100
3,10 USD
310,00 USD
250
2,94 USD
735,00 USD
500
2,64 USD
1 320,00 USD
1000
2,22 USD
2 220,00 USD
2500
2,11 USD
5 275,00 USD
5000
2,03 USD
10 150,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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