FDB5680

Mfr. #:: FDB5680
Produttore:: Rochester Electronics, LLC
Descrizione:: Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FDB5680 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: FAIRCHILD

categoria di prodotto: Chip IC

Tags: FDB568, FDB56, FDB5, FDB

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDB5680 Descrizione

***ser: Not available to order USE 512-FDB20AN06A0

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***emi: N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ

***r Electronics: Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***ure Electronics: Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-252AA

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 12.6 Milliohms,ID 43A,D-Pak,PD 71W,VGS+/-20V

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:43A; On Resistance Rds(On):0.0126Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11.1 Milliohms;ID 51A;TO-220AB;PD 80W;-55deg

***ure Electronics: Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-220AB Tube

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W

***ment14 APAC: MOSFET, N, 55V, 51A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Junction to Case Thermal Resistance A:1.87°C/W; On State resistance @ Vgs = 10V:13.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 60V 43A 15,8mΩ 175°C TO-220 IRFB3806PBF

*** Source Electronics: Trans MOSFET N-CH 60V 43A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 43A TO-220AB

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***(Formerly Allied Electronics): MOSFET, 60V, 43A, 16.2 MOHM, 22 NC QG, TO-220AB

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ment14 APAC: MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-220AB; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: Single N-Channel Logic Level Power MOSFET 60V, 46A, 16mΩ

***(Formerly Allied Electronics): NTD5865NLT4G N-channel MOSFET Transistor; 40 A; 60 V; 3-Pin DPAK

***ure Electronics: N-Channel 60 V 16 mOhm 52 W Surface Mount Power MosFet - TO-252-3

***nell: MOSFET, N-CH, 60V, 46A, 71W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016oh; Available until stocks are exhausted Alternative available

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 46 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 19 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 12.4 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 71

***emi: N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ

***ure Electronics: N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

***rchild Semiconductor: This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FDB5680 DISTI # 512-FDB5680	ON Semiconductor	MOSFET RoHS: Not compliant	0
FDB5680	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	8000	1000:$1.5800 500:$1.6600 100:$1.7300 25:$1.8100 1:$1.9400
FDB5680	Fairchild Semiconductor Corporation	40 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	609	287:$0.6250 51:$0.7000 1:$2.0000

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: FDB8870 OMO.#: OMO-FDB8870	MOSFET 30V N-Channel PowerTrench
	Mfr.#: FDB045AN08AO OMO.#: OMO-FDB045AN08AO-1190	Nuovo e originale
	Mfr.#: FDB088N08 OMO.#: OMO-FDB088N08-ON-SEMICONDUCTOR	MOSFET N-CH 75V 75A D2PAK
	Mfr.#: FDB2570FSC OMO.#: OMO-FDB2570FSC-1190	Nuovo e originale
	Mfr.#: FDB3672 OMO.#: OMO-FDB3672-ON-SEMICONDUCTOR	MOSFET N-CH 100V 44A D2PAK
	Mfr.#: FDB7042 OMO.#: OMO-FDB7042-1190	Nuovo e originale
	Mfr.#: FDB9P25 OMO.#: OMO-FDB9P25-1190	Nuovo e originale
	Mfr.#: FDB28N30TM-CUT TAPE OMO.#: OMO-FDB28N30TM-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: FDB86360-F085 OMO.#: OMO-FDB86360-F085-ON-SEMICONDUCTOR	MOSFET N-CH 80V 110A TO263
	Mfr.#: FDBA 56-16-26 PN-K 059 OMO.#: OMO-FDBA-56-16-26-PN-K-059-1190	FDBA 56-16-26 PN-K 059

Disponibilità

Azione:: Available
Su ordine:: 5000
Inserisci la quantità:

Il prezzo attuale di FDB5680 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,94 USD~~; ~~0,94 USD~~

10: ~~0,89 USD~~; ~~8,91 USD~~

100: ~~0,84 USD~~; ~~84,38 USD~~

500: ~~0,80 USD~~; ~~398,45 USD~~

1000: ~~0,75 USD~~; ~~750,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

FDB568 3
FDB56 7
FDB5 21
FDB 624

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FDB5680

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes