SQ9407EY-T1_GE3

SQ9407EY-T1_GE3
Mfr. #:
SQ9407EY-T1_GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SQ9407EY-T1_GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQ9407EY-T1_GE3 DatasheetSQ9407EY-T1_GE3 Datasheet (P4-P6)SQ9407EY-T1_GE3 Datasheet (P7-P9)SQ9407EY-T1_GE3 Datasheet (P10)
ECAD Model:
Maggiori informazioni:
SQ9407EY-T1_GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
4.6 A
Rds On - Resistenza Drain-Source:
67 mOhms
Vgs th - Tensione di soglia gate-source:
2.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
40 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
3.75 W
Configurazione:
Separare
Modalità canale:
Aumento
Qualificazione:
AEC-Q101
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SQ
Tipo di transistor:
1 P-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
10 S
Tempo di caduta:
8 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
13 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
36 ns
Tempo di ritardo di accensione tipico:
11 ns
Unità di peso:
0.008466 oz
Tags
SQ940, SQ94, SQ9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Trans MOSFET P-CH 60V 4.6A Automotive 8-Pin SOIC N T/R
***ark
Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant: Yes
***ure Electronics
Single P-Channel 60 V 85 mOhm 3.75 W SMT Automotive Power Mosfet - SC-8
***et
P-CHANNEL 60-V (D-S) 175C MOSFET
***ronik
P-CH 60V 4,6A 85mOhm SO8 SMD RoHSconf
***ark
Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
***eco
Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC
***ure Electronics
Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi
***ure Electronics
DMP4050SSS Series 40 V 4.4 A P-Channel Enhancement Mode Mosfet - SOIC-8
***el Electronic
Dual nano power high-voltage comparator with open-drain output 8-SOIC 0 to 70
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: P Variants: Enhancement mode Power dissipation: 1.56 W
***icroelectronics
P-channel 60 V, 0.13 Ohm typ., 3 A STripFET F6 Power MOSFET in a SO-8 package
***ure Electronics
P-Channel 60 V 160 mOhm Surface Mount STripFET F6 Power Mosfet SOIC-8
***et
Trans MOSFET P-CH 60V 3A 8-Pin SOIC T/R
***ure Electronics
Si4154DY Series N-Channel 40 V 3.3 mOhm Surface Mount Power Mosfet - SOIC-8
***enic
40V 36A 7.8W 3.3m´Î@10V15A 2.5V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
MOSFET, N-CH, 40V, 36A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Source Voltage Vds:40V; On Resistance
***nell
MOSFET, N-CH, 40V, 36A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 7.8W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***ure Electronics
Single N-Channel 30 V 9.5 mOhms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18200mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 18.2A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:18.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
***-Wing Technology
VISHAY SI7454DDP-T1-GE3 MOSFET Transistor, N Channel, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
***ure Electronics
Single N-Channel 100 V 33 mOhm SMT TrenchFET Power Mosfet - PowerPAK SO-8
***nell
MOSFET, N-CH, 100V, 21A, PP SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:29.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Parte # Mfg. Descrizione Azione Prezzo
SQ9407EY-T1-GE3
DISTI # V36:1790_09219191
Vishay IntertechnologiesP-CHANNEL 60-V (D-S) 175C MOSF0
  • 2500000:$0.4227
  • 1250000:$0.4229
  • 250000:$0.4345
  • 25000:$0.4527
  • 2500:$0.4557
SQ9407EY-T1_GE3
DISTI # SQ9407EY-T1_GE3CT-ND
Vishay SiliconixMOSFET P-CHANNEL 60V 4.6A 8SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2567In Stock
  • 1000:$0.5029
  • 500:$0.6370
  • 100:$0.7711
  • 10:$0.9890
  • 1:$1.1100
SQ9407EY-T1_GE3
DISTI # SQ9407EY-T1_GE3TR-ND
Vishay SiliconixMOSFET P-CHANNEL 60V 4.6A 8SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 12500:$0.4166
  • 5000:$0.4329
  • 2500:$0.4557
SQ9407EY-T1_GE3
DISTI # SQ9407EY-T1_GE3
Vishay IntertechnologiesTrans MOSFET P-CH 60V 4.6A 8-Pin SO T/R - Tape and Reel (Alt: SQ9407EY-T1_GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.3969
  • 15000:$0.4079
  • 10000:$0.4199
  • 5000:$0.4369
  • 2500:$0.4509
SQ9407EY-T1_GE3
DISTI # SQ9407EY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 60V 4.6A 8-Pin SO T/R (Alt: SQ9407EY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.3619
  • 15000:€0.3889
  • 10000:€0.4219
  • 5000:€0.4899
  • 2500:€0.7179
SQ9407EY-T1_GE3
DISTI # 781-SQ9407EY-T1_GE3
Vishay IntertechnologiesMOSFET -60V -4.6A 3.75W AEC-Q101 Qualified
RoHS: Compliant
3214
  • 1:$1.0800
  • 10:$0.8920
  • 100:$0.6850
  • 500:$0.5890
  • 1000:$0.4640
  • 2500:$0.4330
  • 5000:$0.4120
  • 10000:$0.4030
SQ9407EY-T1-GE3
DISTI # 781-SQ9407EY-T1-GE3
Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SQ9407EY-T1_GE3
RoHS: Compliant
0
    SQ9407EY-T1-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SQ9407EY-T1_GE3
    RoHS: Compliant
    Americas -
      Immagine Parte # Descrizione
      SN74AUP1G125DCKR

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      Buffers & Line Drivers Lo-Pwr Single Bus Buffer Gate
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      Voltage References AC Lo NoiseVery Low DriftPrec Vltg REF
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      SD0603S040S0R2

      Mfr.#: SD0603S040S0R2

      OMO.#: OMO-SD0603S040S0R2

      Schottky Diodes & Rectifiers 40volts 0.2A SIZE 0603
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      Mfr.#: ATMEGA2560V-8AU

      OMO.#: OMO-ATMEGA2560V-8AU

      8-bit Microcontrollers - MCU 256kB Flash 4kB EEPROM 86 I/O Pins
      CMI-9653S-SMT-TR

      Mfr.#: CMI-9653S-SMT-TR

      OMO.#: OMO-CMI-9653S-SMT-TR

      Audio Indicators & Alerts Buzzer 9.6mm sq 2.7kHz 3V SMT
      CMI-9653S-SMT-TR

      Mfr.#: CMI-9653S-SMT-TR

      OMO.#: OMO-CMI-9653S-SMT-TR-CUI

      AUDIO MAGNETIC IND 2-5V SMD
      REF5050AQDRQ1

      Mfr.#: REF5050AQDRQ1

      OMO.#: OMO-REF5050AQDRQ1-TEXAS-INSTRUMENTS

      Voltage References AC Lo NoiseVery Low DriftPrec Vltg REF
      ABM11AIG-40.000MHZ-4Z-T3

      Mfr.#: ABM11AIG-40.000MHZ-4Z-T3

      OMO.#: OMO-ABM11AIG-40-000MHZ-4Z-T3-ABRACON

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      Mfr.#: SN74AUP1G125DCKR

      OMO.#: OMO-SN74AUP1G125DCKR-TEXAS-INSTRUMENTS

      Buffers & Line Drivers Lo-Pwr Single Bus Buffer Gate
      Disponibilità
      Azione:
      Available
      Su ordine:
      1986
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      Il prezzo attuale di SQ9407EY-T1_GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,08 USD
      1,08 USD
      10
      0,89 USD
      8,92 USD
      100
      0,68 USD
      68,50 USD
      500
      0,59 USD
      294,50 USD
      1000
      0,46 USD
      464,00 USD
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