BSB012NE2LXIXUMA1

BSB012NE2LXIXUMA1
Mfr. #:
BSB012NE2LXIXUMA1
Produttore:
Infineon Technologies
Descrizione:
RF Bipolar Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSB012NE2LXIXUMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
OptiMOS
Confezione
Bobina
Alias ​​parziali
BSB012NE2LXI SP001034232
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
WDSON-2
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
57 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 40 C
Tempo di caduta
4.6 ns
Ora di alzarsi
6 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
170 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1 V to 2 V
Rds-On-Drain-Source-Resistenza
1.2 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
34 ns
Tempo di ritardo all'accensione tipico
5.7 ns
Qg-Gate-Carica
32 nC
Transconduttanza diretta-Min
180 S
Tags
BSB012NE, BSB012, BSB01, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, MG-WDSON-2, RoHS
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
Parte # Mfg. Descrizione Azione Prezzo
BSB012NE2LXIXUMA1
DISTI # BSB012NE2LXIXUMA1-ND
Infineon Technologies AGMOSFET N-CH 25V 170A WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.9831
BSB012NE2LXIXUMA1
DISTI # SP001034232
Infineon Technologies AGTrans MOSFET N-CH 25V 37A 7-Pin WDSON T/R (Alt: SP001034232)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 10000
  • 5000:€0.9519
  • 10000:€0.7779
  • 20000:€0.7139
  • 30000:€0.6589
  • 50000:€0.6119
BSB012NE2LXIXUMA1
DISTI # BSB012NE2LXIXUMA1
Infineon Technologies AGTrans MOSFET N-CH 25V 37A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB012NE2LXIXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.7919
  • 10000:$0.7629
  • 20000:$0.7359
  • 30000:$0.7109
  • 50000:$0.6979
BSB012NE2LXIXUMA1
DISTI # 726-BSB012NE2LXIXUMA
Infineon Technologies AGMOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
RoHS: Compliant
0
  • 1:$2.0300
  • 10:$1.7200
  • 100:$1.3800
  • 500:$1.2100
  • 1000:$0.9970
  • 2500:$0.9290
  • 5000:$0.8940
BSB012NE2LXI
DISTI # 726-BSB012NE2LXI
Infineon Technologies AGMOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
RoHS: Compliant
0
  • 1:$2.0300
  • 10:$1.7200
  • 100:$1.3800
  • 500:$1.2100
  • 1000:$0.9970
  • 2500:$0.9290
  • 5000:$0.8940
BSB012NE2LXIXUMA1Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant
897
  • 1000:$0.7100
  • 500:$0.7500
  • 100:$0.7800
  • 25:$0.8100
  • 1:$0.8700
Immagine Parte # Descrizione
BSB012NE2LXIXUMA1

Mfr.#: BSB012NE2LXIXUMA1

OMO.#: OMO-BSB012NE2LXIXUMA1

MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LXI

Mfr.#: BSB012NE2LXI

OMO.#: OMO-BSB012NE2LXI

MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LX

Mfr.#: BSB012NE2LX

OMO.#: OMO-BSB012NE2LX

MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LX5G

Mfr.#: BSB012NE2LX5G

OMO.#: OMO-BSB012NE2LX5G-1190

Nuovo e originale
BSB012NE2LXI

Mfr.#: BSB012NE2LXI

OMO.#: OMO-BSB012NE2LXI-1190

MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LXXUMA1

Mfr.#: BSB012NE2LXXUMA1

OMO.#: OMO-BSB012NE2LXXUMA1-1190

Nuovo e originale
BSB012NE2LX

Mfr.#: BSB012NE2LX

OMO.#: OMO-BSB012NE2LX-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LXIXUMA1

Mfr.#: BSB012NE2LXIXUMA1

OMO.#: OMO-BSB012NE2LXIXUMA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di BSB012NE2LXIXUMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,04 USD
1,04 USD
10
0,99 USD
9,91 USD
100
0,94 USD
93,87 USD
500
0,89 USD
443,30 USD
1000
0,83 USD
834,40 USD
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