SIA414DJ-T1-GE3

Mfr. #:: SIA414DJ-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET N-CH 8V 12A SC70-6
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIA414DJ-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIA414DJ-T1-GE3 Datasheet SIA414DJ-T1-GE3 Datasheet (P4-P6)SIA414DJ-T1-GE3 Datasheet (P7-P9)
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Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SIA414DJ-GE3

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: PowerPAKR SC-70-6

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR SC-70-6 Single

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 19W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 8V

Ingresso-Capacità-Ciss-Vds: 1800pF @ 4V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 11 mOhm @ 9.7A, 4.5V

Vgs-th-Max-Id: 800mV @ 250μA

Gate-Carica-Qg-Vgs: 32nC @ 5V

Pd-Power-Dissipazione: 3.5 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 20 ns

Ora di alzarsi: 10 ns

Vgs-Gate-Source-Voltage: 5 V

Id-Continuo-Scarico-Corrente: 12 A

Vds-Drain-Source-Breakdown-Voltage: 8 V

Rds-On-Drain-Source-Resistenza: 11 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 65 ns

Tempo di ritardo all'accensione tipico: 12 ns

Transconduttanza diretta-Min: 50 S

Modalità canale: Aumento

Tags: SIA414DJ-T, SIA414D, SIA414, SIA41, SIA4, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA414DJ-T1-GE3 Descrizione

***ure Electronics: N Channel 8 V 0.041 O 19 W 32 nC Surface Mount Power MosFet - PPAK-SC-70-6

***et: Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R

***ark: N-Channel 8-V (D-S) Mosfet Rohs Compliant: No

***ment14 APAC: MOSFET,N CH,8V,12A,SC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:8V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:5V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIA414DJ-T1-GE3 DISTI # V72:2272_09216826	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	46	25:$0.4167 10:$0.7788 1:$0.8567
SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6211In Stock	1000:$0.4589 500:$0.5812 100:$0.7495 10:$0.9480 1:$1.0700
SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6211In Stock	1000:$0.4589 500:$0.5812 100:$0.7495 10:$0.9480 1:$1.0700
SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.4158
SIA414DJ-T1-GE3 DISTI # C1S803601323334	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	46	25:$0.4167 10:$0.7788
SIA414DJ-T1-GE3 DISTI # 25790297	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	46	25:$0.4167 19:$0.7788
SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA414DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.3825 6000:$0.2943 9000:$0.2342 15000:$0.1979 30000:$0.1822 75000:$0.1766 150000:$0.1713
SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA414DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3929 6000:$0.3809 12000:$0.3649 18000:$0.3549 30000:$0.3459
SIA414DJ-T1-GE3 DISTI # 85W0169	Vishay Intertechnologies	N CHANNEL MOSFET, 8V, 12A, SC-70, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:800mV , RoHS Compliant: Yes	0	1:$0.4000 3000:$0.3970 6000:$0.3780 12000:$0.3350
SIA414DJ-T1-GE3 DISTI # 16P3612	Vishay Intertechnologies	N CHANNEL MOSFET, 8V, 12A, SC-70,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:800mV,Product Range:- , RoHS Compliant: Yes	0	1:$0.9500 25:$0.7780 50:$0.6880 100:$0.5970 250:$0.5560 500:$0.5140 1000:$0.4050
SIA414DJ-T1-GE3 DISTI # 781-SIA414DJ-T1-GE3	Vishay Intertechnologies	MOSFET 8.0V 12A 19W 11mohm @ 4.5V RoHS: Compliant	0	1:$0.9500 10:$0.7780 100:$0.5970 500:$0.5140 1000:$0.4050 3000:$0.3780
SIA414DJ-T1-GE3	Vishay Semiconductors	12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET	6495	5683:$0.2520 2668:$0.2640 1:$0.9600
SIA414DJ-T1-GE3	Vishay Siliconix	12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET	3234	2668:$0.2640 596:$0.3000 1:$0.9600
SIA414DJ-T1-GE3	Vishay Dale	12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET	2930	2668:$0.2640 596:$0.3000 1:$0.9600
SIA414DJ-T1-GE3	Vishay Intertechnologies	MOSFET 8.0V 12A 19W 11mohm @ 4.5V RoHS: Compliant	Americas -
SIA414DJ-T1-GE3 DISTI # 1838996	Vishay Intertechnologies	MOSFET,N CH,8V,12A,SC70-6 RoHS: Compliant	0	10:$1.5000 50:$1.2100 100:$0.9650 500:$0.8370 1000:$0.7240 2500:$0.6720

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SIA414DJ-T1-GE3-CUT TAPE OMO.#: OMO-SIA414DJ-T1-GE3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SIA414DJ OMO.#: OMO-SIA414DJ-1190	Nuovo e originale
	Mfr.#: SIA414DJ-T1-GE3 OMO.#: OMO-SIA414DJ-T1-GE3-VISHAY	MOSFET N-CH 8V 12A SC70-6
	Mfr.#: SIA414DJ-TI-E3 OMO.#: OMO-SIA414DJ-TI-E3-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 2000
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Il prezzo attuale di SIA414DJ-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,38 USD~~; ~~0,38 USD~~

10: ~~0,36 USD~~; ~~3,59 USD~~

100: ~~0,34 USD~~; ~~34,02 USD~~

500: ~~0,32 USD~~; ~~160,65 USD~~

1000: ~~0,30 USD~~; ~~302,40 USD~~

Iniziare con

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SIA414D 4
SIA414 5
SIA41 28
SIA4 136
SIA 347

SIA414DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes