SPW11N60CFD

SPW11N60CFD
Mfr. #:
SPW11N60CFD
Produttore:
Rochester Electronics, LLC
Descrizione:
IGBT Transistors MOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SPW11N60CFD Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
CoolMOS CFD
Confezione
Tubo
Alias ​​parziali
SP000014534 SPW11N60CFDFKSA1 SPW11N60CFDXK
Unità di peso
1.340411 oz
Stile di montaggio
Foro passante
Nome depositato
CoolMOS
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
125 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
7 ns
Ora di alzarsi
18 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
11 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Rds-On-Drain-Source-Resistenza
440 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
43 ns
Tempo di ritardo all'accensione tipico
34 ns
Modalità canale
Aumento
Tags
SPW11N60CF, SPW11N60C, SPW11N60, SPW11N6, SPW11N, SPW11, SPW1, SPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 600V 11A 3-Pin TO-247 T/R
***ineon SCT
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies, PG-TO247-3, RoHS
***ark
MOSFET, N, COOLMOS, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:11A; Resistance, Rds On:0.44ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247; ;RoHS Compliant: Yes
***ineon
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. | Summary of Features: Fourth series of CoolMOS market entry in 2004; Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low; Specific for phase-shift ZVS and DC-AC power applications | Benefits: Improved efficiency; More efficient, more compact, lighter and cooler; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness | Target Applications: Solar; Adapter; PC power; Consumer; Server; Telecom
***nell
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.44ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Cont Current Id @ 25°C:11A; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:125W; Pulse Current Idm:28A; Termination Type:Through Hole; Voltage Vds:650V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Parte # Mfg. Descrizione Azione Prezzo
SPW11N60CFD
DISTI # C1S322000037632
Infineon Technologies AGTrans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
1
  • 1:$2.5800
SPW11N60CFDFKSA1
DISTI # SPW11N60CFDFKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 11A TO-247
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    SPW11N60CFD
    DISTI # 726-SPW11N60CFD
    Infineon Technologies AGMOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD
    RoHS: Compliant
    0
      SPW11N60CFDFKSA1
      DISTI # N/A
      Infineon Technologies AGMOSFET LOW POWER_LEGACY0
        SPW11N60CFDInfineon Technologies AGPower Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
        RoHS: Compliant
        4796
        • 1000:$1.9300
        • 500:$2.0300
        • 100:$2.1100
        • 25:$2.2000
        • 1:$2.3700
        SPW11N60CFD
        DISTI # 1095703
        Infineon Technologies AG 
        RoHS: Compliant
        0
        • 1:$5.5100
        • 10:$4.6900
        • 100:$4.0600
        Immagine Parte # Descrizione
        SPW11N80C3

        Mfr.#: SPW11N80C3

        OMO.#: OMO-SPW11N80C3

        MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3
        SPW11N60C3

        Mfr.#: SPW11N60C3

        OMO.#: OMO-SPW11N60C3-124

        Darlington Transistors MOSFET N-Ch 600V 11A TO247-3 CoolMOS C3
        SPW112A

        Mfr.#: SPW112A

        OMO.#: OMO-SPW112A-1190

        Nuovo e originale
        SPW11B80C3

        Mfr.#: SPW11B80C3

        OMO.#: OMO-SPW11B80C3-1190

        Nuovo e originale
        SPW11N60CFD,11N60CFD

        Mfr.#: SPW11N60CFD,11N60CFD

        OMO.#: OMO-SPW11N60CFD-11N60CFD-1190

        Nuovo e originale
        SPW11N60S5FKSA1

        Mfr.#: SPW11N60S5FKSA1

        OMO.#: OMO-SPW11N60S5FKSA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 600V 11A TO-247
        SPW11N65C3

        Mfr.#: SPW11N65C3

        OMO.#: OMO-SPW11N65C3-1190

        Nuovo e originale
        SPW11N80C3  NOPB

        Mfr.#: SPW11N80C3 NOPB

        OMO.#: OMO-SPW11N80C3-NOPB-1190

        Nuovo e originale
        SPW11N80C3E8160

        Mfr.#: SPW11N80C3E8160

        OMO.#: OMO-SPW11N80C3E8160-1190

        Nuovo e originale
        SPW11N80C3FKSA1

        Mfr.#: SPW11N80C3FKSA1

        OMO.#: OMO-SPW11N80C3FKSA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 800V 11A TO-247
        Disponibilità
        Azione:
        Available
        Su ordine:
        3000
        Inserisci la quantità:
        Il prezzo attuale di SPW11N60CFD è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        2,90 USD
        2,90 USD
        10
        2,75 USD
        27,50 USD
        100
        2,61 USD
        260,55 USD
        500
        2,46 USD
        1 230,40 USD
        1000
        2,32 USD
        2 316,00 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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