HGT1S3N60A4DS9A0

HGT1S3N60A4DS9A0
Mfr. #:
HGT1S3N60A4DS9A0
Produttore:
ON Semiconductor
Descrizione:
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGT1S3N60A4DS9A0 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
HGT1S3N60A, HGT1S3, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
HGT1S3N60A4DS9A
DISTI # HGT1S3N60A4DS9A-ND
ON SemiconductorIGBT 600V 17A 70W D2PAK
Min Qty: 800
Container: Tube
Limited Supply - Call
    HGT1S3N60A4DS9A
    DISTI # HGT1S3N60A4DS9A
    ON SemiconductorPWR IGBT 7A,600V,SMPS SERIESN-CH W/DIODE TO-263AB - Bulk (Alt: HGT1S3N60A4DS9A)
    RoHS: Compliant
    Min Qty: 200
    Container: Bulk
    Americas - 0
    • 1000:$1.4900
    • 2000:$1.4900
    • 200:$1.5900
    • 400:$1.5900
    • 600:$1.5900
    HGT1S3N60A4DS9AFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    RoHS: Compliant
    4713
    • 1000:$1.6400
    • 500:$1.7300
    • 100:$1.8000
    • 25:$1.8800
    • 1:$2.0200
    Immagine Parte # Descrizione
    HGT1S3N60A4DS9A

    Mfr.#: HGT1S3N60A4DS9A

    OMO.#: OMO-HGT1S3N60A4DS9A

    Motor / Motion / Ignition Controllers & Drivers 600V N-Channel IGBT SMPS Series
    HGT1S3N60A4DS9A

    Mfr.#: HGT1S3N60A4DS9A

    OMO.#: OMO-HGT1S3N60A4DS9A-ON-SEMICONDUCTOR

    IGBT 600V 17A 70W D2PAK
    HGT1S3N60A4DS9A0

    Mfr.#: HGT1S3N60A4DS9A0

    OMO.#: OMO-HGT1S3N60A4DS9A0-1190

    Nuovo e originale
    HGT1S3N60A4S

    Mfr.#: HGT1S3N60A4S

    OMO.#: OMO-HGT1S3N60A4S-1190

    Nuovo e originale
    HGT1S3N60B3DS

    Mfr.#: HGT1S3N60B3DS

    OMO.#: OMO-HGT1S3N60B3DS-1190

    - Bulk (Alt: HGT1S3N60B3DS)
    HGT1S3N60B3S

    Mfr.#: HGT1S3N60B3S

    OMO.#: OMO-HGT1S3N60B3S-1190

    Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    HGT1S3N60C3D

    Mfr.#: HGT1S3N60C3D

    OMO.#: OMO-HGT1S3N60C3D-1190

    Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-262AA
    HGT1S3N60C3DS

    Mfr.#: HGT1S3N60C3DS

    OMO.#: OMO-HGT1S3N60C3DS-1190

    Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    HGT1S3N60C3DS9A

    Mfr.#: HGT1S3N60C3DS9A

    OMO.#: OMO-HGT1S3N60C3DS9A-1190

    Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di HGT1S3N60A4DS9A0 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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    10
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