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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| RFD7N10LESM | Intersil Corporation | 2889 | ||
| RFD7N10LESM | Harris Semiconductor | 1155 | ||
| RFD7N10LESM | ISC | DPAK/TO-252 | 5000 |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: RFD7N10L OMO.#: OMO-RFD7N10L-1190 |
Nuovo e originale |
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|
Mfr.#: RFD7N10LE OMO.#: OMO-RFD7N10LE-1190 |
Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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Mfr.#: RFD7N10LEEM OMO.#: OMO-RFD7N10LEEM-1190 |
Nuovo e originale |
|
|
Mfr.#: RFD7N10LESM OMO.#: OMO-RFD7N10LESM-1190 |
Nuovo e originale |