IPB014N06NATMA1

Mfr. #:: IPB014N06NATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 60V 180A D2PAK-6
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPB014N06NATMA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: IPB014N06NATMA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263-7

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 60 V

Id - Corrente di scarico continua:: 180 A

Rds On - Resistenza Drain-Source:: 1.2 mOhms

Vgs th - Tensione di soglia gate-source:: 2.1 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 124 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 214 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: OptiMOS

Confezione:: Bobina

Altezza:: 4.4 mm

Lunghezza:: 10 mm

Prodotto:: Potenza OptiMOS

Serie:: OptiMOS 5

Tipo di transistor:: 1 N-Channel

Tipo:: Transistor di potenza OptiMOS

Larghezza:: 9.25 mm

Marca:: Tecnologie Infineon

Transconduttanza diretta - Min:: 120 S

Tempo di caduta:: 14 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 18 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 47 ns

Tempo di ritardo di accensione tipico:: 22 ns

Parte # Alias:: IPB014N06N IPB14N6NXT SP000917408

Unità di peso:: 0.056438 oz

Tags: IPB014, IPB01, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB014N06NATMA1 Valutazioni e recensioni

S***o

The parcel went for a long time, but the goods are satisfied, quality packaging, chips work

2019-01-20

K***i

Fast delivery (10.3.2019-26.3.2019), full set on the list. Thank you very much. Not for the first time i cooperate with this seller and always everything is delivered quickly and without errors.

2019-03-26

G***r

Shit.

2019-06-26

IPB014N06NATMA1 Descrizione

***Components: In a Pack of 4, N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK Infineon IPB014N06NATMA1

***ure Electronics: Single N-Channel 60 V 1.4 mOhm 106 nC OptiMOS Power Mosfet - D2PAK-7

***ical: Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263

***et Europe: Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R

***an P&S: 60V,1.4mΩ,180A,N-Channel Power MOSFET

***i-Key: MOSFET N-CH 60V 34A TO263-7

***ronik: N-CH 60V 180A 1,4mOhm TO263-7

***ark: Mosfet, N-Ch, 60V, 180A, To-263-7; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0012Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 180A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:214W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, N-CH, 60V, 180A, TO-263-7; Polarità Transistor:Canale N; Corrente Continua di Drain Id:180A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0012ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:214W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

IPB014N06NATMA1 Maggiori informazioni

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPB014N06NATMA1 DISTI # V72:2272_06377743	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	961	500:$2.2330 250:$2.4070 100:$2.6440 25:$2.7320 10:$3.0360 1:$3.9314
IPB014N06NATMA1 DISTI # V36:1790_06377743	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0	1000:$1.5890
IPB014N06NATMA1 DISTI # IPB014N06NATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 34A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	90In Stock	500:$2.4484 100:$2.8761 10:$3.5100 1:$3.9100
IPB014N06NATMA1 DISTI # IPB014N06NATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 34A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	90In Stock	500:$2.4484 100:$2.8761 10:$3.5100 1:$3.9100
IPB014N06NATMA1 DISTI # IPB014N06NATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 34A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	5000:$1.8330 2000:$1.9045 1000:$2.0048
IPB014N06NATMA1 DISTI # 32011835	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.6558
IPB014N06NATMA1 DISTI # 31274162	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	961	500:$2.2330 250:$2.4070 100:$2.6440 25:$2.7320 10:$3.0360 5:$3.9314
IPB014N06NATMA1 DISTI # 32334089	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	336	10000:$1.3163 4000:$1.3761 1000:$1.4751
IPB014N06NATMA1 DISTI # IPB014N06NATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Bulk (Alt: IPB014N06NATMA1) RoHS: Compliant Min Qty: 248 Container: Bulk	Americas - 0	2480:$1.1900 744:$1.2900 1240:$1.2900 248:$1.3900 496:$1.3900
IPB014N06NATMA1 DISTI # IPB014N06NATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB014N06NATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.2900 4000:$1.3900 6000:$1.3900 1000:$1.4900 2000:$1.4900
IPB014N06NATMA1 DISTI # SP000917408	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: SP000917408) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.1900 6000:€1.2900 4000:€1.3900 2000:€1.4900 1000:€1.7900
IPB014N06NATMA1 DISTI # 97Y1819	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	59	500:$2.2800 250:$2.5500 100:$2.6900 50:$2.8200 25:$2.9600 10:$3.0900 1:$3.6500
IPB014N06N DISTI # 726-IPB014N06N	Infineon Technologies AG	MOSFET N-Ch 60V 180A D2PAK-6 RoHS: Compliant	334	1:$3.6100 10:$3.0600 100:$2.6600 250:$2.5200 500:$2.2600 1000:$1.9100 2000:$1.8100
IPB014N06NATMA1 DISTI # 726-IPB014N06NATMA1	Infineon Technologies AG	MOSFET N-Ch 60V 180A D2PAK-6 RoHS: Compliant	104	1:$3.6100 10:$3.0600 100:$2.6600 250:$2.5200 500:$2.2600 1000:$1.9100 2000:$1.8100
IPB014N06NATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 34A I(D), 60V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant	8	1000:$1.3300 500:$1.4000 100:$1.4600 25:$1.5200 1:$1.6400
IPB014N06NATMA1 DISTI # 9062921P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 180A OPTIMOS TO263, RL	296	200:£1.7380 80:£1.8750 40:£2.0080 8:£2.1830
IPB014N06NATMA1 DISTI # 2617426	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7 RoHS: Compliant	59	500:$3.9200 100:$4.8400 10:$5.9000 1:$6.6100
IPB014N06NATMA1 DISTI # 2617426	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7	1277	500:£1.7400 250:£1.9400 100:£2.0500 10:£2.3500 1:£3.1200

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Disponibilità

Azione:: 319
Su ordine:: 2302
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Il prezzo attuale di IPB014N06NATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~3,61 USD~~; ~~3,61 USD~~

10: ~~3,06 USD~~; ~~30,60 USD~~

100: ~~2,66 USD~~; ~~266,00 USD~~

250: ~~2,52 USD~~; ~~630,00 USD~~

500: ~~2,26 USD~~; ~~1 130,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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IPB014 4
IPB01 53
IPB0 405
IPB 1339

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