FS50R12W2T4_B11

Mfr. #:: FS50R12W2T4_B11
Produttore:: Infineon Technologies
Descrizione:: IGBT Modules IGBT 1200V 50A
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FS50R12W2T4_B11 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: Moduli IGBT

Prodotto:: Moduli di silicio IGBT

Tensione collettore-emettitore VCEO Max:: 1200 V

Tensione di saturazione collettore-emettitore:: 2.15 V

Corrente continua del collettore a 25 C:: 83 A

Corrente di dispersione gate-emettitore:: 100 nA

Pd - Dissipazione di potenza:: 335 W

Temperatura di esercizio minima:: - 40 C

Temperatura massima di esercizio:: + 150 C

Confezione:: Vassoio

Marca:: Tecnologie Infineon

Stile di montaggio:: Montaggio su telaio

Tensione massima dell'emettitore di gate:: 20 V

Tipologia di prodotto:: Moduli IGBT

Quantità confezione di fabbrica:: 15

sottocategoria:: IGBT

Parte # Alias:: FS50R12W2T4B11BOMA1 SP000546148

Unità di peso:: 1.375685 oz

Tags: FS50R12W, FS50R12, FS50R1, FS50R, FS50, FS5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FS50R12W2T4_B11 Descrizione

***et Europe: Trans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):1.2Kv; Power Dissipation Pd:335W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:18Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPACK 2B 1200 V / 50 A sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Low Switching Losses; Trench IGBT 4; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; PressFIT Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon; ups

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FS50R12W2T4B11BOMA1 DISTI # FS50R12W2T4B11BOMA1-ND	Infineon Technologies AG	MOD IGBT LOW PWR EASY2B-2 RoHS: Compliant Min Qty: 15 Container: Tray	Temporarily Out of Stock	15:$49.0293
FS50R12W2T4_B11 DISTI # SP000546148	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2 (Alt: SP000546148) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€37.2900 500:€38.1900 100:€39.2900 50:€40.5900 25:€42.0900 10:€46.2900 1:€57.2900
FS50R12W2T4_B11 DISTI # SP000546148	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2 (Alt: SP000546148) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€35.7900 500:€38.3900 100:€39.7900 50:€41.2900 25:€42.9900 10:€44.7900 1:€48.7900
FS50R12W2T4B11BOMA1 DISTI # FS50R12W2T4B11BOMA1	Infineon Technologies AG	LOW POWER EASY - Trays (Alt: FS50R12W2T4B11BOMA1) RoHS: Compliant Min Qty: 15 Container: Tray	Americas - 0	150:$38.0900 90:$38.9900 60:$39.9900 30:$40.9900 15:$41.5900
FS50R12W2T4B11BOMA1 DISTI # FS50R12W2T4B11BOMA1	Infineon Technologies AG	LOW POWER EASY - Bulk (Alt: FS50R12W2T4B11BOMA1) RoHS: Compliant Min Qty: 9 Container: Bulk	Americas - 0	90:$37.4900 45:$38.0900 27:$39.4900 18:$40.9900 9:$42.4900
FS50R12W2T4_B11 DISTI # 84R7223	Infineon Technologies AG	IGBT Module,Transistor Polarity:N Channel,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:335W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:18Pins,Product Range:- RoHS Compliant: Yes	0
FS50R12W2T4_B11 DISTI # 641-FS50R12W2T4_B11	Infineon Technologies AG	IGBT Modules IGBT 1200V 50A	1	1:$52.1900 5:$51.0200 10:$49.0200 25:$47.4500 50:$47.4400 100:$43.9700
FS50R12W2T4B11BOMA1	Infineon Technologies AG	RoHS: Not Compliant	5	1000:$38.8400 500:$40.8900 100:$42.5700 25:$44.3900 1:$47.8100
FS50R12W2T4_B11 DISTI # 1833612	Infineon Technologies AG	IGBT, L POWER, 1200V, 50A, EASYPACK RoHS: Compliant	0	250:$65.6400 100:$67.5900 50:$72.9200 25:$72.9500 10:$75.3500 5:$78.4300 1:$80.2300
FS50R12W2T4_B11 DISTI # 1833612	Infineon Technologies AG	IGBT, L POWER, 1200V, 50A, EASYPACK RoHS: Compliant	0	50:£33.2300 10:£36.9300 5:£39.7100 1:£40.6200

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Disponibilità

Azione:: 16
Su ordine:: 1999
Inserisci la quantità:

Il prezzo attuale di FS50R12W2T4_B11 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~52,19 USD~~; ~~52,19 USD~~

5: ~~51,02 USD~~; ~~255,10 USD~~

10: ~~49,02 USD~~; ~~490,20 USD~~

25: ~~47,45 USD~~; ~~1 186,25 USD~~

50: ~~47,44 USD~~; ~~2 372,00 USD~~

100: ~~43,97 USD~~; ~~4 397,00 USD~~

250: ~~42,70 USD~~; ~~10 675,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

FS50R12W 5
FS50R12 23
FS50R1 26
FS50R 48
FS50 140
FS5 322

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FS50R12W2T4_B11

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes