IKQ40N120CH3XKSA1

IKQ40N120CH3XKSA1
Mfr. #:
IKQ40N120CH3XKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors IGBT PRODUCTS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IKQ40N120CH3XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO247-3-46
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
80 A
Pd - Dissipazione di potenza:
500 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
80 A
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Parte # Alias:
IKQ40N120CH3 SP001272706
Unità di peso:
0.211644 oz
Tags
IKQ4, IKQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IKQ40N120CH3XKSA1 P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247
***et Europe
High speed switching series third generation IGBT
***i-Key
IGBT HS SW 1200V 40A TO-247-3
***ark
Igbt, 1.2Kv, 80A, 500W, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 1.2KV, 80A, 500W, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, 1.2KV, 80A, 500W, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):2V; Dissipazione di Potenza Pd:500W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter
Parte # Mfg. Descrizione Azione Prezzo
IKQ40N120CH3XKSA1
DISTI # IKQ40N120CH3XKSA1-ND
Infineon Technologies AGIGBT HS SW 1200V 40A TO-247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
191In Stock
  • 720:$6.3015
  • 240:$7.2366
  • 25:$8.3344
  • 10:$8.7410
  • 1:$9.6800
IKQ40N120CH3XKSA1
DISTI # IKQ40N120CH3XKSA1
Infineon Technologies AGHigh speed switching series third generation IGBT - Rail/Tube (Alt: IKQ40N120CH3XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$4.8900
  • 1440:$4.9900
  • 960:$5.0900
  • 480:$5.2900
  • 240:$5.4900
IKQ40N120CH3XKSA1
DISTI # SP001272706
Infineon Technologies AGHigh speed switching series third generation IGBT (Alt: SP001272706)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€3.9900
  • 500:€4.2900
  • 100:€4.4900
  • 50:€4.5900
  • 25:€4.7900
  • 10:€4.9900
  • 1:€5.4900
IKQ40N120CH3XKSA1
DISTI # 93AC7069
Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes170
  • 500:$6.0600
  • 250:$6.6500
  • 100:$6.9600
  • 50:$7.4800
  • 25:$8.0100
  • 10:$8.4000
  • 1:$9.3000
IKQ40N120CH3XKSA1
DISTI # 726-IKQ40N120CH3XKSA
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant
968
  • 1:$9.2100
  • 10:$8.3200
  • 25:$7.9300
  • 100:$6.8900
  • 250:$6.5800
  • 500:$6.0000
IKQ40N120CH3XKSA1
DISTI # 1623286
Infineon Technologies AGIGBT 1200V 40A HIGHSPEED3 DIODE TO-247, TU106
  • 600:£4.0310
  • 300:£4.3190
  • 150:£4.6510
  • 30:£5.0390
IKQ40N120CH3XKSA1
DISTI # 2986434
Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247240
  • 100:£5.0000
  • 50:£5.3800
  • 10:£5.7500
  • 5:£6.6700
  • 1:£7.2000
IKQ40N120CH3XKSA1
DISTI # 2986434
Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247
RoHS: Compliant
170
  • 100:$7.3000
  • 250:$7.3000
  • 50:$8.8600
  • 10:$9.0300
  • 5:$9.7300
  • 1:$10.8000
Immagine Parte # Descrizione
IKW40N120CS6XKSA1

Mfr.#: IKW40N120CS6XKSA1

OMO.#: OMO-IKW40N120CS6XKSA1

IGBT Transistors INDUSTRY 14
FGH40T120SQDNL4

Mfr.#: FGH40T120SQDNL4

OMO.#: OMO-FGH40T120SQDNL4

IGBT Transistors IGBT 1200V 40A UFS
IKY40N120CS6XKSA1

Mfr.#: IKY40N120CS6XKSA1

OMO.#: OMO-IKY40N120CS6XKSA1

IGBT Transistors INDUSTRY 14
IKQ75N120CH3XKSA1

Mfr.#: IKQ75N120CH3XKSA1

OMO.#: OMO-IKQ75N120CH3XKSA1

IGBT Transistors IGBT PRODUCTS
NGTB40N120FL3WG

Mfr.#: NGTB40N120FL3WG

OMO.#: OMO-NGTB40N120FL3WG

IGBT Transistors IGBT 1200V 40A FS3 SOLAR/
NGTB40N120S3WG

Mfr.#: NGTB40N120S3WG

OMO.#: OMO-NGTB40N120S3WG

IGBT Transistors IGBT 1200V 40A FS3 LOW VF
IKQ40N120CT2XKSA1

Mfr.#: IKQ40N120CT2XKSA1

OMO.#: OMO-IKQ40N120CT2XKSA1

IGBT Transistors IGBT PRODUCTS
IKY40N120CH3XKSA1

Mfr.#: IKY40N120CH3XKSA1

OMO.#: OMO-IKY40N120CH3XKSA1

IGBT Transistors
IKW40N120H3

Mfr.#: IKW40N120H3

OMO.#: OMO-IKW40N120H3

IGBT Transistors IGBT PRODUCTS
IKW40N120T2

Mfr.#: IKW40N120T2

OMO.#: OMO-IKW40N120T2

IGBT Transistors LOW LOSS DuoPack 1200V 40A
Disponibilità
Azione:
968
Su ordine:
2951
Inserisci la quantità:
Il prezzo attuale di IKQ40N120CH3XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
9,21 USD
9,21 USD
10
8,32 USD
83,20 USD
25
7,93 USD
198,25 USD
100
6,89 USD
689,00 USD
250
6,58 USD
1 645,00 USD
500
6,00 USD
3 000,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
Top