MR25H128ACDFR

MR25H128ACDFR
Mfr. #:
MR25H128ACDFR
Produttore:
Everspin Technologies
Descrizione:
NVRAM 128Kb 3.3V 16Kx8 SPI
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MR25H128ACDFR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
MR25H128ACDFR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologie Everspin
Categoria di prodotto:
NVRAM
RoHS:
Y
Pacchetto/custodia:
DFN-8
Serie:
MR25H128A
Confezione:
Bobina
Marca:
Tecnologie Everspin
Sensibile all'umidità:
Tipologia di prodotto:
NVRAM
Quantità confezione di fabbrica:
4000
sottocategoria:
Memoria e archiviazione dati
Tags
MR25H12, MR25H1, MR25H, MR25, MR2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Serial SPI MRAMs
Everspin Technologies MR25H256 / MR25H10 /MRH25H128 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
Immagine Parte # Descrizione
MR25H128AMDF

Mfr.#: MR25H128AMDF

OMO.#: OMO-MR25H128AMDF

NVRAM 128Kb 3.3V 16Kx8 SPI
MR25H10CDF

Mfr.#: MR25H10CDF

OMO.#: OMO-MR25H10CDF

NVRAM 1Mb 3.3V 128Kx8 Serial MRAM
MR25H10MDFR

Mfr.#: MR25H10MDFR

OMO.#: OMO-MR25H10MDFR

NVRAM 1Mb 3.3V 128Kx8 SPI
MR25H128AMDFR

Mfr.#: MR25H128AMDFR

OMO.#: OMO-MR25H128AMDFR

NVRAM 128Kb 3.3V 16Kx8 SPI
MR25H10MDCR

Mfr.#: MR25H10MDCR

OMO.#: OMO-MR25H10MDCR-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3V 128Kx8 Serial MRAM
MR25H10CDC

Mfr.#: MR25H10CDC

OMO.#: OMO-MR25H10CDC-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 Serial MRAM
MR25H10MDC

Mfr.#: MR25H10MDC

OMO.#: OMO-MR25H10MDC-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3V 128Kx8 Serial MRAM
MR25H10MDFR

Mfr.#: MR25H10MDFR

OMO.#: OMO-MR25H10MDFR-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 SPI
MR25H10CDCR

Mfr.#: MR25H10CDCR

OMO.#: OMO-MR25H10CDCR-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 Serial MRAM
MR25H128APDF

Mfr.#: MR25H128APDF

OMO.#: OMO-MR25H128APDF-240

NVRAM MRAM Serial-SPI 128Kbit 3.3V 8-Pin DFN EP Tray
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di MR25H128ACDFR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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