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Parte # | Mfg. | Descrizione | Azione | Prezzo |
---|---|---|---|---|
FDI025N06 DISTI # FDI025N06-ND | ON Semiconductor | MOSFET N-CH 60V 265A TO-262 RoHS: Compliant Min Qty: 400 Container: Tube | Limited Supply - Call | |
FDI025N06 DISTI # FDI025N06 | ON Semiconductor | - Bulk (Alt: FDI025N06) RoHS: Compliant Min Qty: 110 Container: Bulk | Americas - 0 |
|
FDI025N06 DISTI # 512-FDI025N06 | ON Semiconductor | MOSFET 60V N-Channel PowerTrench RoHS: Compliant | 0 | |
FDI025N06 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 120A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 29 |
|
Immagine | Parte # | Descrizione |
---|---|---|
Mfr.#: FDI040N06 OMO.#: OMO-FDI040N06 |
MOSFET PT3 Low Qg 60V, 4.0Mohm | |
Mfr.#: FDI025N06 |
MOSFET N-CH 60V 265A TO-262 | |
Mfr.#: FDI0302-100K OMO.#: OMO-FDI0302-100K-1190 |
Nuovo e originale | |
Mfr.#: FDI038AN OMO.#: OMO-FDI038AN-1190 |
Nuovo e originale | |
Mfr.#: FDI038AN06A0_NL OMO.#: OMO-FDI038AN06A0-NL-1190 |
Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB | |
Mfr.#: FDI038AN06AD OMO.#: OMO-FDI038AN06AD-1190 |
Nuovo e originale | |
Mfr.#: FDI040N06 |
MOSFET N-CH 60V 120A I2PAK | |
Mfr.#: FDI044AN03L OMO.#: OMO-FDI044AN03L-1190 |
Nuovo e originale | |
Mfr.#: FDI047AN08 OMO.#: OMO-FDI047AN08-1190 |
Nuovo e originale | |
Mfr.#: FDI047AN08AO OMO.#: OMO-FDI047AN08AO-1190 |
Nuovo e originale |