IRF8308MTRPBF

IRF8308MTRPBF
Mfr. #:
IRF8308MTRPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 30V N-Channel HEXFET Power MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF8308MTRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8308MTRPBF DatasheetIRF8308MTRPBF Datasheet (P4-P6)IRF8308MTRPBF Datasheet (P7-P9)IRF8308MTRPBF Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DirectFET-MX
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
150 A
Rds On - Resistenza Drain-Source:
3.5 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
28 nC
Pd - Dissipazione di potenza:
89 W
Configurazione:
Separare
Nome depositato:
DirectFET
Confezione:
Bobina
Altezza:
0.7 mm
Lunghezza:
6.35 mm
Tipo di transistor:
1 N-Channel
Larghezza:
5.05 mm
Marca:
Tecnologie Infineon
Sensibile all'umidità:
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
4800
sottocategoria:
MOSFET
Parte # Alias:
SP001570686
Unità di peso:
0.017637 oz
Tags
IRF8308MTRPBF, IRF8308MTRP, IRF8308, IRF830, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 1.9 mOhm 42 nC HEXFET® Power Mosfet - DirectFET®
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 30V, 27A, DIRECTFET; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.8W; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-40°C to +150°C
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
Parte # Mfg. Descrizione Azione Prezzo
IRF8308MTRPBF
DISTI # IRF8308MTRPBF-ND
Infineon Technologies AGMOSFET N-CH 30V 27A MX
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4800:$1.1326
IRF8308MTRPBF
DISTI # IRF8308MTRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 27A 7-Pin Direct-FET MX T/R - Tape and Reel (Alt: IRF8308MTRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Reel
Americas - 0
  • 4800:$1.1409
  • 9600:$1.0999
  • 19200:$1.0599
  • 28800:$1.0239
  • 48000:$1.0059
IRF8308MTRPBF
DISTI # SP001570686
Infineon Technologies AGTrans MOSFET N-CH 30V 27A 7-Pin Direct-FET MX T/R (Alt: SP001570686)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel
Europe - 0
  • 4800:€1.2719
  • 9600:€1.0599
  • 19200:€0.9779
  • 28800:€0.9089
  • 48000:€0.8479
IRF8308MTRPBF
DISTI # 942-IRF8308MTRPBF
Infineon Technologies AGMOSFET 30V N-Channel HEXFET Power MOSFET
RoHS: Compliant
0
  • 1:$2.3400
  • 10:$1.9800
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1500
  • 2500:$1.0700
  • 4800:$1.0300
Immagine Parte # Descrizione
IRF8301MTRPBF

Mfr.#: IRF8301MTRPBF

OMO.#: OMO-IRF8301MTRPBF

MOSFET MOSF N CH 30V 34A DIRECTFET MT
IRF830STRR

Mfr.#: IRF830STRR

OMO.#: OMO-IRF830STRR-VISHAY

MOSFET N-CH 500V 4.5A D2PAK
IRF8302

Mfr.#: IRF8302

OMO.#: OMO-IRF8302-1190

MOSFETs
IRF8302MTRPBF/84.08302.0

Mfr.#: IRF8302MTRPBF/84.08302.0

OMO.#: OMO-IRF8302MTRPBF-84-08302-0-1190

Nuovo e originale
IRF830N

Mfr.#: IRF830N

OMO.#: OMO-IRF830N-1190

Nuovo e originale
IRF830NTRPBF

Mfr.#: IRF830NTRPBF

OMO.#: OMO-IRF830NTRPBF-1190

Nuovo e originale
IRF830PBF,IRF830A,IRF830

Mfr.#: IRF830PBF,IRF830A,IRF830

OMO.#: OMO-IRF830PBF-IRF830A-IRF830-1190

Nuovo e originale
IRF830R

Mfr.#: IRF830R

OMO.#: OMO-IRF830R-1190

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF830SPBF,IRF830STRLPBF

Mfr.#: IRF830SPBF,IRF830STRLPBF

OMO.#: OMO-IRF830SPBF-IRF830STRLPBF-1190

Nuovo e originale
IRF8306MTR1PBF

Mfr.#: IRF8306MTR1PBF

OMO.#: OMO-IRF8306MTR1PBF-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET MOSFT 30V Gen 3.6mOhm mx 25nC Og
Disponibilità
Azione:
Available
Su ordine:
1500
Inserisci la quantità:
Il prezzo attuale di IRF8308MTRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,34 USD
2,34 USD
10
1,98 USD
19,80 USD
100
1,59 USD
159,00 USD
500
1,39 USD
695,00 USD
1000
1,15 USD
1 150,00 USD
2500
1,07 USD
2 675,00 USD
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