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BSZ123N08NS3GATMA1

BSZ123N08NS3GATMA1
Mfr. #:
BSZ123N08NS3GATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSZ123N08NS3GATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSZ123N08NS3GATMA1 DatasheetBSZ123N08NS3GATMA1 Datasheet (P4-P6)BSZ123N08NS3GATMA1 Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TSDSON-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
80 V
Id - Corrente di scarico continua:
40 A
Rds On - Resistenza Drain-Source:
10.3 mOhms
Vgs th - Tensione di soglia gate-source:
2 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
25 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
66 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
OptiMOS
Confezione:
Bobina
Altezza:
1.1 mm
Lunghezza:
3.3 mm
Serie:
OptiMOS 3
Tipo di transistor:
1 N-Channel
Larghezza:
3.3 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
17 S
Tempo di caduta:
4 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
18 ns
Quantità confezione di fabbrica:
5000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
19 ns
Tempo di ritardo di accensione tipico:
12 ns
Parte # Alias:
BSZ123N08NS3 BSZ123N8NS3GXT G SP000443632
Unità di peso:
0.004938 oz
Tags
BSZ123, BSZ12, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 12.3 mOhm 19 nC OptiMOS™ Power Mosfet - TSDSON-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0103Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 40A, 80V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:66W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Parte # Mfg. Descrizione Azione Prezzo
BSZ123N08NS3GATMA1
DISTI # V72:2272_06384484		Infineon Technologies AGTrans MOSFET N-CH 80V 10A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		16730
  • 75000:$0.4638
  • 30000:$0.4910
  • 15000:$0.5181
  • 6000:$0.5453
  • 3000:$0.5725
  • 1000:$0.5996
  • 500:$0.6219
  • 250:$0.6915
  • 100:$0.7524
  • 50:$0.8008
  • 25:$0.9120
  • 10:$0.9373
  • 1:$1.0578
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		49468In Stock
  • 1000:$0.6174
  • 500:$0.7821
  • 100:$1.0085
  • 10:$1.2760
  • 1:$1.4400
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		49468In Stock
  • 1000:$0.6174
  • 500:$0.7821
  • 100:$1.0085
  • 10:$1.2760
  • 1:$1.4400
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 40A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5315
BSZ123N08NS3GATMA1
DISTI # 31079585		Infineon Technologies AGTrans MOSFET N-CH 80V 10A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		16730
  • 15000:$0.5160
  • 6000:$0.5442
  • 3000:$0.5725
  • 1000:$0.6007
  • 500:$0.6201
  • 250:$0.6889
  • 100:$0.7502
  • 50:$0.7979
  • 25:$0.9080
  • 13:$0.9333
BSZ123N08NS3GATMA1
DISTI # BSZ123N08NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 10A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ123N08NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.4739
  • 10000:$0.4729
  • 20000:$0.4709
  • 30000:$0.4699
  • 50000:$0.4689
BSZ123N08NS3GATMA1.
DISTI # 27AC1116		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:66W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.4740
  • 10000:$0.4730
  • 20000:$0.4710
  • 30000:$0.4700
  • 50000:$0.4690
BSZ123N08NS3 G
DISTI # 726-BSZ123N08NS3G		Infineon Technologies AGMOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
RoHS: Compliant		44
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7820
  • 500:$0.6910
  • 1000:$0.5450
  • 5000:$0.4840
BSZ123N08NS3GATMA1
DISTI # 726-BSZ123N08NS3GATM		Infineon Technologies AGMOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7820
  • 500:$0.6910
  • 1000:$0.5450
  • 5000:$0.4840
BSZ123N08NS3GATMA1
DISTI # 1775505		Infineon Technologies AGMOSFET, N CH, 40A, 80V, PG-TSDSON-8
RoHS: Compliant		6
  • 5:£1.0900
  • 25:£0.9840
  • 100:£0.7550
BSZ123N08NS3GATMA1
DISTI # 1775505		Infineon Technologies AGMOSFET, N CH, 40A, 80V, PG-TSDSON-8
RoHS: Compliant		0
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.2400
  • 500:$1.1000
  • 1000:$0.8630
  • 5000:$0.7660
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OMO.#: OMO-UA78M33CKVURG3

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RC0805FR-07330RL

Mfr.#: RC0805FR-07330RL

OMO.#: OMO-RC0805FR-07330RL

 Thick Film Resistors - SMD 330 OHM 1%
RC0402FR-0710KL

Mfr.#: RC0402FR-0710KL

OMO.#: OMO-RC0402FR-0710KL

 Thick Film Resistors - SMD 10K OHM 1%
RC0402JR-074K7L

Mfr.#: RC0402JR-074K7L

OMO.#: OMO-RC0402JR-074K7L

 Thick Film Resistors - SMD 4.7K OHM 5%
SD05T1G

Mfr.#: SD05T1G

OMO.#: OMO-SD05T1G-ON-SEMICONDUCTOR

 Nuovo e originale
87438-0343

Mfr.#: 87438-0343

OMO.#: OMO-87438-0343-410

 Headers & Wire Housings 3 CKT 1.5mm HDR. Rt.-Angle SMT
Disponibilità
Azione:
13
Su ordine:
1996
Inserisci la quantità:
Il prezzo attuale di BSZ123N08NS3GATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,19 USD
1,19 USD
10
1,01 USD
10,10 USD
100
0,78 USD
78,20 USD
500
0,69 USD
345,50 USD
1000
0,54 USD
545,00 USD
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