IPD80R2K0P7ATMA1

Mfr. #:: IPD80R2K0P7ATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPD80R2K0P7ATMA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:
Maggiori informazioni:: IPD80R2K0P7ATMA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: DPAK-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 800 V

Id - Corrente di scarico continua:: 3 A

Rds On - Resistenza Drain-Source:: 1.7 Ohms

Vgs th - Tensione di soglia gate-source:: 2.5 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 9 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 24 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: CoolMOS

Confezione:: Bobina

Serie:: CoolMOS P7

Tipo di transistor:: 1 N-Channel

Marca:: Tecnologie Infineon

Tempo di caduta:: 20 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 8 ns

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 40 ns

Tempo di ritardo di accensione tipico:: 10 ns

Parte # Alias:: IPD80R2K0P7 SP001634906

Unità di peso:: 0.013655 oz

Tags: IPD80R2K, IPD80R2, IPD80R, IPD80, IPD8, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD80R2K0P7ATMA1 Maggiori informazioni

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPD80R2K0P7ATMA1 DISTI # V36:1790_18205136	Infineon Technologies AG	LOW POWER_NEW	5000	2500:$0.3682
IPD80R2K0P7ATMA1 DISTI # V72:2272_18205136	Infineon Technologies AG	LOW POWER_NEW	2500	1000:$0.3577 500:$0.4552 250:$0.4909 100:$0.5094 25:$0.6433 10:$0.6448 1:$0.7349
IPD80R2K0P7ATMA1 DISTI # IPD80R2K0P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 3A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6764In Stock	1000:$0.4281 500:$0.5423 100:$0.6992 10:$0.8850 1:$1.0000
IPD80R2K0P7ATMA1 DISTI # IPD80R2K0P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 3A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6764In Stock	1000:$0.4281 500:$0.5423 100:$0.6992 10:$0.8850 1:$1.0000
IPD80R2K0P7ATMA1 DISTI # IPD80R2K0P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 3A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	25000:$0.3527 12500:$0.3547 5000:$0.3685 2500:$0.3879
IPD80R2K0P7ATMA1 DISTI # 30656610	Infineon Technologies AG	LOW POWER_NEW	5000	2500:$0.3958
IPD80R2K0P7ATMA1 DISTI # 30532133	Infineon Technologies AG	LOW POWER_NEW	2500	1000:$0.3845 500:$0.4893 250:$0.5277 100:$0.5476 25:$0.6915 20:$0.6932
IPD80R2K0P7ATMA1 DISTI # 30163446	Infineon Technologies AG	LOW POWER_NEW	2500	2500:$0.3724
IPD80R2K0P7ATMA1 DISTI # SP001634906	Infineon Technologies AG	LOW POWER_NEW (Alt: SP001634906) RoHS: Compliant Min Qty: 2500	Europe - 2500	2500:€0.4659 5000:€0.3809 10000:€0.3489 15000:€0.3219 25000:€0.2989
IPD80R2K0P7ATMA1 DISTI # IPD80R2K0P7ATMA1	Infineon Technologies AG	LOW POWER_NEW - Tape and Reel (Alt: IPD80R2K0P7ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3619 5000:$0.3489 10000:$0.3369 15000:$0.3249 25000:$0.3199
IPD80R2K0P7ATMA1 DISTI # 24AC9042	Infineon Technologies AG	MOSFET, N-CH, 800V, 3A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	1655	1000:$0.3780 500:$0.4790 250:$0.5110 100:$0.5420 50:$0.5970 25:$0.6510 10:$0.7060 1:$0.8200
IPD80R2K0P7ATMA1 DISTI # 726-IPD80R2K0P7ATMA1	Infineon Technologies AG	MOSFET RoHS: Compliant	9796	1:$0.8200 10:$0.7060 100:$0.5420 500:$0.4790 1000:$0.3780
IPD80R2K0P7ATMA1 DISTI # 2771320	Infineon Technologies AG	MOSFET, N-CH, 800V, 3A, TO-252 RoHS: Compliant	2485	500:£0.3760 250:£0.4010 100:£0.4250 25:£0.5630 5:£0.6230
IPD80R2K0P7ATMA1 DISTI # XSKDRABV0021241	Infineon Technologies AG	RoHS: Compliant	7500 in Stock0 on Order	7500:$0.5264 2500:$0.5640
IPD80R2K0P7ATMA1 DISTI # 2771320	Infineon Technologies AG	MOSFET, N-CH, 800V, 3A, TO-252 RoHS: Compliant	1655	1000:$0.6360 500:$0.8060 100:$1.0400 5:$1.3200

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Disponibilità

Azione:: Available
Su ordine:: 1991
Inserisci la quantità:

Il prezzo attuale di IPD80R2K0P7ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,82 USD~~; ~~0,82 USD~~

10: ~~0,71 USD~~; ~~7,06 USD~~

100: ~~0,54 USD~~; ~~54,20 USD~~

500: ~~0,48 USD~~; ~~239,50 USD~~

1000: ~~0,38 USD~~; ~~378,00 USD~~

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IPD80R2K0P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes