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STU16N65M5

STU16N65M5
Mfr. #:
STU16N65M5
Produttore:
STMicroelectronics
Descrizione:
MOSFET N-CH 65V 12A MDMESH
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STU16N65M5 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STU16N65M5 maggiori informazioni STU16N65M5 Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-251-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
12 A
Rds On - Resistenza Drain-Source:
299 mOhms
Vgs - Tensione Gate-Source:
25 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
90 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
6.2 mm
Lunghezza:
6.6 mm
Serie:
STI16N65M5
Tipo di transistor:
1 N-Channel
Larghezza:
2.4 mm
Marca:
STMicroelectronics
Tempo di caduta:
7 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
9 ns
Quantità confezione di fabbrica:
75
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
30 ns
Tempo di ritardo di accensione tipico:
25 ns
Unità di peso:
0.139332 oz
Tags
STU16N6, STU16N, STU16, STU1, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in IPAK
***r Electronics
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 650V, 12A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in IPAK
***r Electronics
Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 650V, 7A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics SCT
Power MOSFETs, 600V, 11A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 0.39 Ohm Through Hole MDmesh M2 II Plus Mosfet - IPAK
***p One Stop
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmesh II plus 600V 11A
***icroelectronics SCT
Power MOSFETs, 600V, 11A, IPAK, Tube
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ponent Sense
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK
***ser
MOSFETs 600V N-Channel MOSFET
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:7A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:21A; No. of Pins:3; Power Dissipation:83W; Power, Pd:83W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V
***th Star Micro
Transistor MOSFET N-CH 500V 2.4A 3-Pin (3+Tab) IPAK
***ure Electronics
Single N-Channel 500 V 3 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***ment14 APAC
MOSFET, N, 500V, 2.4A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:2.4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:7.7A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:8.6ns; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
STU16N65M5
DISTI # 497-11402-5-ND		STMicroelectronicsMOSFET N-CH 650V 12A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5In Stock
  • 1:$4.3500
STU16N65M5
DISTI # 511-STU16N65M5		STMicroelectronicsMOSFET N-CH 65V 12A MDMESH
RoHS: Compliant		0
    Immagine Parte # Descrizione
    STU16N60M2

    Mfr.#: STU16N60M2

    OMO.#: OMO-STU16N60M2

    		 MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package
    STU16N65M2

    Mfr.#: STU16N65M2

    OMO.#: OMO-STU16N65M2

    		 MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
    STU16N65M5

    Mfr.#: STU16N65M5

    OMO.#: OMO-STU16N65M5

    		 MOSFET N-CH 65V 12A MDMESH
    STU16L01

    Mfr.#: STU16L01

    OMO.#: OMO-STU16L01-1190

    		 Nuovo e originale
    STU16N60M2

    Mfr.#: STU16N60M2

    OMO.#: OMO-STU16N60M2-STMICROELECTRONICS

    		 MOSFET N-CH 600V 12A IPAK
    STU16N65M2

    Mfr.#: STU16N65M2

    OMO.#: OMO-STU16N65M2-STMICROELECTRONICS

    		 MOSFET N-CH 650V 11A IPAK
    STU16N65M5

    Mfr.#: STU16N65M5

    OMO.#: OMO-STU16N65M5-STMICROELECTRONICS

    		 MOSFET N-CH 650V 12A IPAK
    STU16NB50

    Mfr.#: STU16NB50

    OMO.#: OMO-STU16NB50-1190

    		 Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di STU16N65M5 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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