IXFK320N17T2

IXFK320N17T2
Mfr. #:
IXFK320N17T2
Produttore:
Littelfuse
Descrizione:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFK320N17T2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXFK320N17T2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
PMIC - Gate Drivers
Tags
IXFK32, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 170V 320A 3-Pin(3+Tab) TO-264
***i-Key
MOSFET N-CH 170V 320A TO264
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Parte # Mfg. Descrizione Azione Prezzo
IXFK320N17T2
DISTI # IXFK320N17T2-ND
IXYS CorporationMOSFET N-CH 170V 320A TO264
RoHS: Compliant
Min Qty: 1
Container: Tube
1In Stock
  • 100:$18.4749
  • 25:$19.8780
  • 1:$23.3900
IXFK320N17T2
DISTI # 747-IXFK320N17T2
IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
2
  • 1:$24.4500
  • 5:$23.9000
  • 10:$22.6200
  • 25:$21.2600
  • 50:$19.6700
  • 100:$19.3100
  • 250:$16.4800
  • 500:$14.3500
Immagine Parte # Descrizione
IXFK32N100X

Mfr.#: IXFK32N100X

OMO.#: OMO-IXFK32N100X

MOSFET 1000V 32A TO-264 Power MOSFET
IXFK32N80P

Mfr.#: IXFK32N80P

OMO.#: OMO-IXFK32N80P

MOSFET 32 Amps 800V 0.27 Rds
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P

MOSFET 32 Amps 1000V 0.32 Rds
IXFK32N90P

Mfr.#: IXFK32N90P

OMO.#: OMO-IXFK32N90P

MOSFET Polar HiPerFETs MOSFET w/Fast Diode
IXFK320N17T2

Mfr.#: IXFK320N17T2

OMO.#: OMO-IXFK320N17T2

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFK32N60

Mfr.#: IXFK32N60

OMO.#: OMO-IXFK32N60

MOSFET 32 Amps 600V
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P-IXYS-CORPORATION

Darlington Transistors MOSFET 32 Amps 1000V 0.32 Rds
IXFK32N60

Mfr.#: IXFK32N60

OMO.#: OMO-IXFK32N60-IXYS-CORPORATION

MOSFET 32 Amps 600V
IXFK32N100Q3

Mfr.#: IXFK32N100Q3

OMO.#: OMO-IXFK32N100Q3-IXYS-CORPORATION

IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A
IXFK32N80Q3

Mfr.#: IXFK32N80Q3

OMO.#: OMO-IXFK32N80Q3-IXYS-CORPORATION

IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di IXFK320N17T2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
21,52 USD
21,52 USD
10
20,45 USD
204,49 USD
100
19,37 USD
1 937,25 USD
500
18,30 USD
9 148,15 USD
1000
17,22 USD
17 220,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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