SSVBC846BPDW1T1G

Mfr. #:: SSVBC846BPDW1T1G
Produttore:: ON Semiconductor
Descrizione:: Bipolar Transistors - BJT SS DUAL GEN XSTR
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SSVBC846BPDW1T1G Scheda dati
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Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: Transistor bipolari - BJT

RoHS:: Y

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SOT-363-6

Polarità del transistor:: NPN, PNP

Configurazione:: Dual

Tensione collettore-emettitore VCEO Max:: 65 V

Collettore-tensione di base VCBO:: 80 V

Emettitore-tensione di base VEBO:: - 5 V, 6 V

Tensione di saturazione collettore-emettitore:: - 0.3 V, 0.25 V

Corrente massima del collettore CC:: - 100 mA, 100 mA

Guadagno larghezza di banda prodotto fT:: 100 MHz

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Serie:: BC846BPDW1

Guadagno di corrente CC hFE Max:: 475

Confezione:: Bobina

Marca:: ON Semiconductor

Corrente continua del collettore:: 100 mA

Guadagno base/collettore DC hfe min:: 200

Pd - Dissipazione di potenza:: 250 mW

Tipologia di prodotto:: BJT - Transistor bipolari

Quantità confezione di fabbrica:: 3000

sottocategoria:: transistor

Unità di peso:: 0.000212 oz

Tags: SSV

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Quality Guarantees

We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SSVBC846BPDW1T1G Descrizione

***hard Electronics: Bipolar Transistors - BJT SS DUAL GEN XSTR

***ark: Sc88 General Purpose Complementary Transistor / Reel

***el Electronic: TRIAC SENS GATE 800V 0.45A TO92

***ure Electronics: BC847PN Series NPN/PNP 45 V 200 mW Small Signal Transistor Surface Mount-SOT-363

***p One Stop Global: Trans GP BJT NPN/PNP 45V 0.1A 200mW Automotive 6-Pin SOT-363 T/R

***nsix Microsemi: Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***(Formerly Allied Electronics): Transistor NPN/PNP 0.1A 45V 200hfeSOT363 | Diodes Inc BC847PN-7-F

***eco: BIPOLAR TRANSISTOR NPN SOIC16

***ment14 APAC: Transistor, NPN, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:300MHz; Power Dissipation

***ark: Transistor, Npn, 45V, -100Ma, 200Mw, Sot-363; Transistor Polarity:Npn, Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:6Pins Rohs Compliant: Yes |Diodes Inc. BC847PN-7-F

***nell: TRANSISTOR, NPN, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 200; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

***ure Electronics: DDC123 Series 50 V 100 mA NPN PRE-Biased Small Signal Dual Transistor - SOT-363

***(Formerly Allied Electronics): NPN Biased Signal Dual Transistor SOT363 | Diodes Inc DDC123JU-7-F

***ical: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin SOT-363 T/R

***ark: Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:2.2Kohm; Base Emitter Resistor R2:47Kohm; No. Of Pins:6 Pin; Msl:-Rohs Compliant: Yes |Diodes Inc. DDC123JU-7-F.

***ure Electronics: DDC114YU Series NPN/PNP 50 V 100 mA Dual Transistor Surface Mount - SOT-363-6

***(Formerly Allied Electronics): NPN Biased Signal Dual Transistor SOT363 | Diodes Inc DDC114YU-7-F

***ical: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin SOT-363 T/R

***nell: TRANS, RF, 50V, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***p One Stop: Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin UMT T/R

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ure Electronics: UMD2N Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SC-88

***ark: Digital Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:22Kohm; Resistor Ratio, R1 / R2:- Rohs Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMD2N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 56hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 56; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ical: Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin UMT T/R

***ure Electronics: UMD12N Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SC-88

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ark: Digital Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:47Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:- Rohs Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMD12N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 68hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 68; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ical: Trans Digital BJT NPN 50V 100mA 150mW 6-Pin UMT T/R

***ure Electronics: UMH3N Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-88

***ark: Transistor Dual, Npn/npn, Um6; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:- Rohs Compliant: Yes

***nell: TRANSISTOR DUAL UM6 NPN/NPN; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMH3N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SSVBC846BPDW1T1G DISTI # SSVBC846BPDW1T1GOSCT-ND	ON Semiconductor	TRANS NPN/PNP 65V SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11995In Stock	1000:$0.0958 500:$0.1249 100:$0.1886 10:$0.3330 1:$0.4500
SSVBC846BPDW1T1G DISTI # SSVBC846BPDW1T1GOSDKR-ND	ON Semiconductor	TRANS NPN/PNP 65V SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11995In Stock	1000:$0.0958 500:$0.1249 100:$0.1886 10:$0.3330 1:$0.4500
SSVBC846BPDW1T1G DISTI # SSVBC846BPDW1T1GOSTR-ND	ON Semiconductor	TRANS NPN/PNP 65V SOT363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	75000:$0.0539 30000:$0.0606 15000:$0.0647 6000:$0.0728 3000:$0.0809
SSVBC846BPDW1T1G DISTI # SSVBC846BPDW1T1G	ON Semiconductor	SS SC88 DUAL GEN XSTR (Alt: SSVBC846BPDW1T1G) RoHS: Compliant Min Qty: 9000	Asia - 36000	450000:$0.0642 225000:$0.0653 90000:$0.0664 45000:$0.0688 27000:$0.0713 18000:$0.0740 9000:$0.0770
SSVBC846BPDW1T1G DISTI # SSVBC846BPDW1T1G	ON Semiconductor	SS SC88 DUAL GEN XSTR (Alt: SSVBC846BPDW1T1G) RoHS: Compliant Min Qty: 3000	Europe - 0	30000:€0.0489 18000:€0.0526 12000:€0.0622 6000:€0.0760 3000:€0.0977
SSVBC846BPDW1T1G DISTI # SSVBC846BPDW1T1G	ON Semiconductor	SS SC88 DUAL GEN XSTR - Tape and Reel (Alt: SSVBC846BPDW1T1G) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	90000:$0.0475 45000:$0.0487 27000:$0.0494 18000:$0.0500 9000:$0.0503
SSVBC846BPDW1T1G DISTI # SSVBC846BPDW1T1G	ON Semiconductor	SS SC88 DUAL GEN XSTR - Bulk (Alt: SSVBC846BPDW1T1G) RoHS: Compliant Min Qty: 6250 Container: Bulk	Americas - 0	62500:$0.0494 31250:$0.0506 18750:$0.0513 12500:$0.0520 6250:$0.0523
SSVBC846BPDW1T1G DISTI # 76T7430	ON Semiconductor	SC88 GENERAL PURPOSE COMP / REEL	0	27000:$0.0590 9000:$0.0610 1000:$0.0730 500:$0.1120 250:$0.1150 100:$0.1190 50:$0.2730 1:$0.4830
SSVBC846BPDW1T1G DISTI # 863-SSVBC846BPDW1T1G	ON Semiconductor	Bipolar Transistors - BJT SS DUAL GEN XSTR RoHS: Compliant	9230	1:$0.4300 10:$0.2780 100:$0.1190 1000:$0.0920 3000:$0.0700 9000:$0.0620 24000:$0.0580
SSVMUN5312DW1T2G DISTI # 863-SSVMUN5312DW1T2G	ON Semiconductor	Bipolar Transistors - Pre-Biased SS BRT COMPLEMENTARY RoHS: Compliant	1358	1:$0.4500 10:$0.3200 100:$0.1470 1000:$0.1130 3000:$0.0960 9000:$0.0880 24000:$0.0820
SSVBC846BPDW1T1G	ON Semiconductor	TRANS NPN/PNP 65V SOT363 RoHS: Not Compliant	6000	1000:$0.0500 25:$0.0600 100:$0.0600 500:$0.0600 1:$0.0700

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Disponibilità

Azione:: Available
Su ordine:: 1992
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Il prezzo attuale di SSVBC846BPDW1T1G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,43 USD~~; ~~0,43 USD~~

10: ~~0,28 USD~~; ~~2,78 USD~~

100: ~~0,12 USD~~; ~~11,90 USD~~

1000: ~~0,09 USD~~; ~~92,00 USD~~

Iniziare con

SSV 81

SSVBC846BPDW1T1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes