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SGH30N60RUFDTU

SGH30N60RUFDTU
Mfr. #:
SGH30N60RUFDTU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors Dis Short Circuit Rated IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SGH30N60RUFDTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3P-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
2.2 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
48 A
Pd - Dissipazione di potenza:
235 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
SGH30N60RUFD
Confezione:
Tubo
Corrente continua del collettore Ic Max:
48 A
Altezza:
18.9 mm
Lunghezza:
15.8 mm
Larghezza:
5 mm
Marca:
ON Semiconductor / Fairchild
Corrente continua del collettore:
48 A
Corrente di dispersione gate-emettitore:
+/- 100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Parte # Alias:
SGH30N60RUFDTU_NL
Unità di peso:
0.225789 oz
Tags
SGH30N60RUFD, SGH30N60R, SGH30N6, SGH30, SGH3, SGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,Igbt,N-Chan+Diode,600V V(Br)Ces,48A I(C),To-247Var Rohs Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail
***rchild Semiconductor
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V, 24 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
***(Formerly Allied Electronics)
600V ULTRAFAST COPACK TRENCH IGBT IN A TO-220AB PACKAGE | Infineon IRGB4062DPBF
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***ure Electronics
IRGB4062DPbF Series 600 V 24 A N-Channel Bipolar Transistor IGBT - TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***ark
Dc Collector Current:48A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Msl:- Rohs Compliant: Yes |Infineon IRGB4062DPBF.
***ment14 APAC
IGBT, COPAK, TO-220; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:48A; Package / Case:TO-220; Power Dissipation Max:250W; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulsed Current Icm:96A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***nell
IGBT, COPAK, TO-247; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 48A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Max: 250W; Pulsed Current Icm: 96A; Rise Time: 22ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***-Wing Technology
Tube Through Hole Trench ROHS3Compliant IGBT Transistor 1.95V @ 15V 24A 48A 250W 89ns
***nell
IGBT,N CH,DIODE,600V,48A,D2PAK; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:250W
***ical
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***nell
IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Parte # Mfg. Descrizione Azione Prezzo
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU-ND		ON SemiconductorIGBT 600V 48A 235W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
  • 450:$3.1408
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: SGH30N60RUFDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.0900
  • 10:€1.8900
  • 25:€1.8900
  • 50:€1.7900
  • 100:€1.7900
  • 500:€1.6900
  • 1000:€1.6900
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: SGH30N60RUFDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.8900
  • 900:$1.8900
  • 1800:$1.7900
  • 2700:$1.7900
  • 4500:$1.7900
SGH30N60RUFDTU
DISTI # 512-SGH30N60RUFDTU		ON SemiconductorIGBT Transistors Dis Short Circuit Rated IGBT
RoHS: Compliant		0
    Immagine Parte # Descrizione
    SGH30N60

    Mfr.#: SGH30N60

    OMO.#: OMO-SGH30N60-1190

    		 Nuovo e originale
    SGH30N60DUFDTU

    Mfr.#: SGH30N60DUFDTU

    OMO.#: OMO-SGH30N60DUFDTU-1190

    		 Nuovo e originale
    SGH30N60RUF

    Mfr.#: SGH30N60RUF

    OMO.#: OMO-SGH30N60RUF-1190

    		 Nuovo e originale
    SGH30N60RUF G30N60

    Mfr.#: SGH30N60RUF G30N60

    OMO.#: OMO-SGH30N60RUF-G30N60-1190

    		 Nuovo e originale
    SGH30N60RUFD G30N60RUF

    Mfr.#: SGH30N60RUFD G30N60RUF

    OMO.#: OMO-SGH30N60RUFD-G30N60RUF-1190

    		 Nuovo e originale
    SGH30N60RUFD G30N60RUFD

    Mfr.#: SGH30N60RUFD G30N60RUFD

    OMO.#: OMO-SGH30N60RUFD-G30N60RUFD-1190

    		 Nuovo e originale
    SGH30N60RUFDTU(SG)

    Mfr.#: SGH30N60RUFDTU(SG)

    OMO.#: OMO-SGH30N60RUFDTU-SG--1190

    		 Nuovo e originale
    SGH30N60RUFTU

    Mfr.#: SGH30N60RUFTU

    OMO.#: OMO-SGH30N60RUFTU-ON-SEMICONDUCTOR

    		 IGBT 600V 48A 235W TO3P
    SGH30N60TU

    Mfr.#: SGH30N60TU

    OMO.#: OMO-SGH30N60TU-1190

    		 Nuovo e originale
    SGH30N60RUFDTU

    Mfr.#: SGH30N60RUFDTU

    OMO.#: OMO-SGH30N60RUFDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Dis Short Circuit Rated IGBT
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di SGH30N60RUFDTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    3,86 USD
    3,86 USD
    10
    3,27 USD
    32,70 USD
    100
    2,84 USD
    284,00 USD
    250
    2,69 USD
    672,50 USD
    500
    2,42 USD
    1 210,00 USD
    1000
    2,04 USD
    2 040,00 USD
    2500
    1,94 USD
    4 850,00 USD
    5000
    1,86 USD
    9 300,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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