BSP297H6327XTSA1

BSP297H6327XTSA1
Mfr. #:
BSP297H6327XTSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 200V 660mA SOT-223-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSP297H6327XTSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BSP297H6327XTSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PG-SOT-223-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
200 V
Id - Corrente di scarico continua:
660 mA
Rds On - Resistenza Drain-Source:
1.8 Ohms
Vgs th - Tensione di soglia gate-source:
800 mV
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
12.9 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
1.8 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
1.6 mm
Lunghezza:
6.5 mm
Serie:
BSP297
Tipo di transistor:
1 N-Channel
Larghezza:
3.5 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
470 mS
Tempo di caduta:
19 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
3.8 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
49 ns
Tempo di ritardo di accensione tipico:
5.2 ns
Parte # Alias:
BSP297 H6327 SP001058622
Unità di peso:
0.003951 oz
Tags
BSP297H, BSP297, BSP29, BSP2, BSP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 1.8 Ohm 12.9 nC SIPMOS® Small Signal Mosfet - SOT-223
***ical
Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N LOGIC SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:1.8W; Transistor Case Style:SOT-223; No. of Pins:4Pins; Operating Temperature Max:150°C; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:1.8W; Pulse Current Idm:2.4A; SMD Marking:BSP 297; Tape Width:12mm; Termination Type:Surface Mount Device; Voltage Vgs th Max:2V
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
Parte # Mfg. Descrizione Azione Prezzo
BSP297H6327XTSA1
DISTI # V72:2272_06391779
Infineon Technologies AGTrans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant
4990
  • 3000:$0.3716
  • 1000:$0.3894
  • 500:$0.4105
  • 250:$0.4561
  • 100:$0.5067
  • 25:$0.7027
  • 10:$0.8588
  • 1:$1.0260
BSP297H6327XTSA1
DISTI # V36:1790_06391779
Infineon Technologies AGTrans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant
0
    BSP297H6327XTSA1
    DISTI # BSP297H6327XTSA1CT-ND
    Infineon Technologies AGMOSFET N-CH 200V 660MA SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    10830In Stock
    • 500:$0.4596
    • 100:$0.5815
    • 10:$0.7580
    • 1:$0.8600
    BSP297H6327XTSA1
    DISTI # BSP297H6327XTSA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 200V 660MA SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    10830In Stock
    • 500:$0.4596
    • 100:$0.5815
    • 10:$0.7580
    • 1:$0.8600
    BSP297H6327XTSA1
    DISTI # BSP297H6327XTSA1TR-ND
    Infineon Technologies AGMOSFET N-CH 200V 660MA SOT-223
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    10000In Stock
    • 25000:$0.2826
    • 10000:$0.2901
    • 5000:$0.3012
    • 2000:$0.3235
    • 1000:$0.3570
    BSP297H6327XTSA1
    DISTI # 32652659
    Infineon Technologies AGTrans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
    RoHS: Compliant
    4990
    • 30:$1.0260
    BSP297H6327XTSA1
    DISTI # BSP297H6327XTSA1
    Infineon Technologies AGTrans MOSFET N-CH 200V 0.66A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP297H6327XTSA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 1000
    • 10000:$0.2089
    • 6000:$0.2149
    • 4000:$0.2199
    • 2000:$0.2259
    • 1000:$0.2319
    BSP297H6327XTSA1
    DISTI # BSP297 H6327
    Infineon Technologies AGTrans MOSFET N-CH 200V 0.66A 4-Pin SOT-223 T/R (Alt: BSP297 H6327)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Asia - 0
    • 50000:$0.2139
    • 25000:$0.2167
    • 10000:$0.2195
    • 5000:$0.2224
    • 3000:$0.2284
    • 2000:$0.2347
    • 1000:$0.2414
    BSP297H6327XTSA1
    DISTI # SP001058622
    Infineon Technologies AGTrans MOSFET N-CH 200V 0.66A 4-Pin SOT-223 T/R (Alt: SP001058622)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 10000:€0.2449
    • 6000:€0.2639
    • 4000:€0.2939
    • 2000:€0.3299
    • 1000:€0.3889
    BSP297H6327XTSA1
    DISTI # 68AC4416
    Infineon Technologies AGMOSFET, N-CH, 200V, 0.66A, SOT-223-4,Transistor Polarity:N Channel,Continuous Drain Current Id:660mA,Drain Source Voltage Vds:200V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.4V,Power RoHS Compliant: Yes1000
    • 100:$0.4290
    • 50:$0.5080
    • 25:$0.5870
    • 10:$0.6660
    • 1:$0.7980
    BSP297H6327XTSA1.
    DISTI # 31AC8228
    Infineon Technologies AGSMALL SIGNAL+P-CH ROHS COMPLIANT: YES0
      BSP297H6327XTSA1
      DISTI # 726-BSP297H6327XTSA1
      Infineon Technologies AGMOSFET N-Ch 200V 660mA SOT-223-3
      RoHS: Compliant
      28697
      • 1:$0.7900
      • 10:$0.6590
      • 100:$0.4250
      • 1000:$0.3400
      BSP297 H6327
      DISTI # 726-BSP297H6327
      Infineon Technologies AGMOSFET N-Ch 200V 660mA SOT-223-3
      RoHS: Compliant
      4140
      • 1:$0.7900
      • 10:$0.6590
      • 100:$0.4250
      • 1000:$0.3400
      BSP297H6327XTSA1
      DISTI # 8269272P
      Infineon Technologies AGMOSFET N-CH 660MA 200V SIPMOS SOT223, RL5300
      • 500:£0.3050
      BSP297H6327XTSA1
      DISTI # 8269272
      Infineon Technologies AGMOSFET N-CH 660MA 200V SIPMOS SOT223, PK900
      • 500:£0.3050
      • 50:£0.4810
      BSP297H6327XTSA1
      DISTI # BSP297H6327XTSA1
      Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,0.66A,1.8W,SOT223371
      • 1000:$0.2815
      • 250:$0.3018
      • 100:$0.3480
      • 25:$0.4336
      • 3:$0.5045
      BSP297H6327XTSA1
      DISTI # 2480632
      Infineon Technologies AGMOSFET, N-CH, 200V, 0.66A, SOT-223-4
      RoHS: Compliant
      995
      • 1000:$0.5230
      • 100:$0.6530
      • 10:$1.0200
      • 1:$1.2200
      BSP297H6327XTSA1
      DISTI # 2480632
      Infineon Technologies AGMOSFET, N-CH, 200V, 0.66A, SOT-223-41039
      • 500:£0.2860
      • 250:£0.3080
      • 100:£0.3300
      • 10:£0.5640
      • 1:£0.7040
      BSP297H6327XTSA1
      DISTI # BSP297
      Infineon Technologies AGN-LogL 200V 0,66A 1,8W 1,8R SOT223
      RoHS: Compliant
      450
      • 25:€0.3640
      • 200:€0.2840
      • 500:€0.2640
      • 1000:€0.2420
      Immagine Parte # Descrizione
      24LC64T-I/OT

      Mfr.#: 24LC64T-I/OT

      OMO.#: OMO-24LC64T-I-OT

      EEPROM 64K 8K X 8 2.5V SER EE IND
      BSP297 H6327

      Mfr.#: BSP297 H6327

      OMO.#: OMO-BSP297-H6327

      MOSFET N-Ch 200V 660mA SOT-223-3
      FH28D-20S-0.5SH(05)

      Mfr.#: FH28D-20S-0.5SH(05)

      OMO.#: OMO-FH28D-20S-0-5SH-05--HIROSE

      FFC & FPC Connectors 20P F SCKT HORIZ SMT STNDRD DUST CVR TYPE
      B82496C3129A

      Mfr.#: B82496C3129A

      OMO.#: OMO-B82496C3129A-819

      Fixed Inductors 1.2nH 1800mA 0.025ohms
      RN73C1J24K9BTDF

      Mfr.#: RN73C1J24K9BTDF

      OMO.#: OMO-RN73C1J24K9BTDF-TE-CONNECTIVITY-AMP

      Thin Film Resistors - SMD RN 0603 24K9 0.1% 10PPM 1K RL
      RP73D1J107KBTDG

      Mfr.#: RP73D1J107KBTDG

      OMO.#: OMO-RP73D1J107KBTDG-1092

      Thin Film Resistors - SMD
      VS-30CTQ100-M3

      Mfr.#: VS-30CTQ100-M3

      OMO.#: OMO-VS-30CTQ100-M3-VISHAY

      High Performance Schottky Rectifier, 2 x 15 A
      ESR25JZPF1R00

      Mfr.#: ESR25JZPF1R00

      OMO.#: OMO-ESR25JZPF1R00-ROHM-SEMI

      RES SMD 1 OHM 1% 2/3W 1210
      BSP297 H6327

      Mfr.#: BSP297 H6327

      OMO.#: OMO-BSP297-H6327-1190

      Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
      24LC64T-I/OT

      Mfr.#: 24LC64T-I/OT

      OMO.#: OMO-24LC64T-I-OT-MICROCHIP-TECHNOLOGY

      EEPROM 64K 8K X 8 2.5V SER EE IND
      Disponibilità
      Azione:
      28
      Su ordine:
      2011
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