OMO ElectronicOMO Electronic
Expand menu
0 Carrello

IRF610SPBF

IRF610SPBF
Mfr. #:
IRF610SPBF
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET N-CH 200V HEXFET MOSFET D2-PA
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF610SPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF610SPBF DatasheetIRF610SPBF Datasheet (P4-P6)IRF610SPBF Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
200 V
Id - Corrente di scarico continua:
3.3 A
Rds On - Resistenza Drain-Source:
1.5 Ohms
Vgs th - Tensione di soglia gate-source:
2 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
8.2 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
36 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Serie:
IRF
Tipo di transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
0.8 S
Tempo di caduta:
8.9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
17 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
14 ns
Tempo di ritardo di accensione tipico:
8.2 ns
Unità di peso:
0.050717 oz
Tags
IRF610S, IRF610, IRF61, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK
***ser
Single-Gate MOSFET Transistors N-Chan 200V 3.3 Amp
***i-Key
MOSFET N-CH 200V 3.3A D2PAK
***
200V N-CH HEXFET MOSFET,D2-PAK
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.3A; On Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
***nell
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:3.3A; Resistance, Rds On:1.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:10A; External Depth:15.49mm; External Length / Height:4.69mm; Power Dissipation:36W; Power Dissipation on 1 Sq. PCB:3.0W; Power, Pd:36W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Width, External:10.54mm
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:3.3A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Power Dissipation on 1 Sq. PCB:3W; Pulse Current Idm:10A; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Parte # Mfg. Descrizione Azione Prezzo
IRF610SPBF
DISTI # IRF610SPBF-ND		Vishay SiliconixMOSFET N-CH 200V 3.3A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		620In Stock
  • 1000:$0.8916
  • 500:$1.0761
  • 100:$1.3835
  • 10:$1.7220
  • 1:$1.9100
IRF610SPBF
DISTI # IRF610SPBF		Vishay IntertechnologiesTrans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: IRF610SPBF)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.8129
  • 2000:$0.7889
  • 4000:$0.7569
  • 6000:$0.7359
  • 10000:$0.7159
IRF610SPBF
DISTI # IRF610SPBF		Vishay IntertechnologiesTrans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK (Alt: IRF610SPBF)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.7049
  • 10:€0.7029
  • 25:€0.7009
  • 50:€0.6989
  • 100:€0.6979
  • 500:€0.6959
  • 1000:€0.6599
IRF610SPBF
DISTI # 63J7328		Vishay IntertechnologiesN CHANNEL MOSFET, 200V, 3.3A D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:3.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):1.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Packaging:Each, RoHS Compliant: Yes0
  • 1:$1.6600
  • 10:$1.3800
  • 25:$1.2800
  • 50:$1.1700
  • 100:$1.0700
  • 500:$0.9320
  • 1000:$0.7720
  • 2500:$0.7190
IRF610SPBF
DISTI # 844-IRF610SPBF		Vishay IntertechnologiesMOSFET N-Chan 200V 3.3 Amp
RoHS: Compliant		797
  • 1:$1.6600
  • 10:$1.3800
  • 100:$1.0700
  • 500:$0.9320
  • 1000:$0.7720
  • 2000:$0.7190
  • 5000:$0.6920
  • 10000:$0.6660
IRF610S
DISTI # 844-IRF610S		Vishay IntertechnologiesMOSFET N-Chan 200V 3.3 Amp
RoHS: Not compliant		0
    IRF610SPBFVishay Siliconix3.3A, 200V, 1.5OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AB164
      IRF610SPBFVishay Siliconix 
      RoHS: Compliant      		Europe - 400
        IRF610SPBFVishay IntertechnologiesMOSFET N-Chan 200V 3.3 Amp
        RoHS: Compliant        		Americas -
          IRF610SPBF.
          DISTI # 9102310          		Vishay IntertechnologiesMOSFET, N, D2-PAK
          RoHS: Compliant          		0
          • 1:$2.6300
          • 10:$2.1900
          • 100:$1.7000
          • 500:$1.4700
          • 1000:$1.2200
          • 2000:$1.1400
          • 5000:$1.1000
          • 10000:$1.0500
          Immagine Parte # Descrizione
          SI8605AC-B-IS1

          Mfr.#: SI8605AC-B-IS1

          OMO.#: OMO-SI8605AC-B-IS1

          		 Digital Isolators 3.75 kV uni- and bi-directional isolator
          2SA1312-BL(TE85L,F

          Mfr.#: 2SA1312-BL(TE85L,F

          OMO.#: OMO-2SA1312-BL-TE85L-F

          		 Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO
          IRF9610SPBF

          Mfr.#: IRF9610SPBF

          OMO.#: OMO-IRF9610SPBF

          		 MOSFET P-CH -200V HEXFET MOSFET
          MBRS140T3G

          Mfr.#: MBRS140T3G

          OMO.#: OMO-MBRS140T3G

          		 Schottky Diodes & Rectifiers 1A 40V
          292304-1

          Mfr.#: 292304-1

          OMO.#: OMO-292304-1

          		 USB Connectors 4P 'B' RECEPTACLE
          ERA-6AED681V

          Mfr.#: ERA-6AED681V

          OMO.#: OMO-ERA-6AED681V

          		 Thin Film Resistors - SMD 0805 680ohms 25ppm 0.5% AEC-Q200
          292304-1

          Mfr.#: 292304-1

          OMO.#: OMO-292304-1-TE-CONNECTIVITY

          		 CONN RCPT USB2.0 TYPEB 4POS R/A
          GMJ325KB7106KMHP

          Mfr.#: GMJ325KB7106KMHP

          OMO.#: OMO-GMJ325KB7106KMHP-TAIYO-YUDEN

          		 CAP CER 10UF 35V X7R 1210
          ECW-U2104KC9

          Mfr.#: ECW-U2104KC9

          OMO.#: OMO-ECW-U2104KC9-PANASONIC

          		 Film Capacitors .1UF 250V PEN FLM 2420 10%
          SI8605AC-B-IS1

          Mfr.#: SI8605AC-B-IS1

          OMO.#: OMO-SI8605AC-B-IS1-SILICON-LABS

          		 Digital Isolators 3.75kV Bidirect I2C Iso+2UniCH 1.7MHz NB
          Disponibilità
          Azione:
          Available
          Su ordine:
          1984
          Inserisci la quantità:
          Il prezzo attuale di IRF610SPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          1,73 USD
          1,73 USD
          10
          1,44 USD
          14,40 USD
          100
          1,11 USD
          111,00 USD
          500
          0,98 USD
          489,00 USD
          1000
          0,81 USD
          810,00 USD
          2000
          0,75 USD
          1 508,00 USD
          5000
          0,73 USD
          3 630,00 USD
          10000
          0,70 USD
          6 980,00 USD
          Iniziare con
          Prodotti più recenti
          • DG3257 Single SPDT Analog Switch
            DG3257 Single SPDT Analog Switch
            Vishay's DG3257 is ideal for analog and digital signal switching in portable consumer and medical devices, and achieves low resistance of 5 Ω at 4.2 V.
          • PowerPAIR®
            PowerPAIR®
            Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
          • Si7655DN -20 V P-Channel MOSFET
            Si7655DN -20 V P-Channel MOSFET
            Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
          • SUM70101EL 100 V P-Channel MOSFET
            SUM70101EL 100 V P-Channel MOSFET
            Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
          • Compare IRF610SPBF
            Compare IRF610SPBF
            IRF610S vs IRF610S2497 vs IRF610SPBF
          • -12 V and -20 V P-Channel Gen III MOSFETs
            -12 V and -20 V P-Channel Gen III MOSFETs
            Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
          More Newest Products
          Top